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Ohmic contact probed by dark injection space-charge-limited current measurements
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10.1063/1.3043880
/content/aip/journal/jap/104/12/10.1063/1.3043880
http://aip.metastore.ingenta.com/content/aip/journal/jap/104/12/10.1063/1.3043880
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

DI-SCLC signals measured at devices with structures of and ITO/NPB/Al under different applied voltages.

Image of FIG. 2.
FIG. 2.

(a) Dependence of and on the value for a device with the structure of and (b) the experimental ratios at different electric field intensities.

Image of FIG. 3.
FIG. 3.

Comparison of the mobility values of NPB observed through DI-SCLC transient and TOF measurements.

Image of FIG. 4.
FIG. 4.

Current-voltage characteristics for devices with structures of (◼) and ITO/NPB/Al (◻). The solid line is the theoretical fit with the trap-free SCLC of NPB.

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/content/aip/journal/jap/104/12/10.1063/1.3043880
2008-12-17
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Ohmic contact probed by dark injection space-charge-limited current measurements
http://aip.metastore.ingenta.com/content/aip/journal/jap/104/12/10.1063/1.3043880
10.1063/1.3043880
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