DI-SCLC signals measured at devices with structures of and ITO/NPB/Al under different applied voltages.
(a) Dependence of and on the value for a device with the structure of and (b) the experimental ratios at different electric field intensities.
Comparison of the mobility values of NPB observed through DI-SCLC transient and TOF measurements.
Current-voltage characteristics for devices with structures of (◼) and ITO/NPB/Al (◻). The solid line is the theoretical fit with the trap-free SCLC of NPB.
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