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Phase separation in SiGe nanocrystals embedded in matrix during high temperature annealing
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10.1063/1.3048543
/content/aip/journal/jap/104/12/10.1063/1.3048543
http://aip.metastore.ingenta.com/content/aip/journal/jap/104/12/10.1063/1.3048543
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Cross-sectional TEM image of the sample annealed at for 1 h (a) and 3 h (b) and size distribution of the nanocrystals in the sample annealed for 1 h (c) and 3 h (d). Insets show the selected area diffraction patterns.

Image of FIG. 2.
FIG. 2.

XRD pattern of the as grown and the samples annealed at different times in the interval of corresponding to (111) planes (a), corresponding to (220) and (311) planes (b), and the decomposition of the (111) diffraction peak of the sample annealed for 3 h (c).

Image of FIG. 3.
FIG. 3.

Raman spectra of the samples annealed at for 1 h (a), 3 h (b), and decomposed peaks of the Si–Ge vibration mode of the sample annealed at for 3 h (c).

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/content/aip/journal/jap/104/12/10.1063/1.3048543
2008-12-19
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Phase separation in SiGe nanocrystals embedded in SiO2 matrix during high temperature annealing
http://aip.metastore.ingenta.com/content/aip/journal/jap/104/12/10.1063/1.3048543
10.1063/1.3048543
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