(a) Structure for the measurements, (b) scanning electron micrograph of the Si nanocrystals, and (c) schematic cross-section view of Si nanocrystals.
characteristics of the nanocrystals/Al structure for samples A, B, and C, measured at 40 K. The inset figure shows the characteristics of the substrate/Al structure also measured at the same temperature.
as function of for sample A measured from 60 to 200 K and samples B and C from 40 to 200 K, as-grown and after hydrogen annealing. The solid lines are at least squares fits to the data.
Fabrication condition of Si nanocrystals.
Estimated values of , , and experimental value of .
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