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Role of C in the formation and kinetics of nanovoids induced by implantation in Si
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10.1063/1.2955707
/content/aip/journal/jap/104/2/10.1063/1.2955707
http://aip.metastore.ingenta.com/content/aip/journal/jap/104/2/10.1063/1.2955707
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

X-TEM images in off-Bragg condition of (a) Si Cz and (b) MBE samples after implantation at 30 keV and , 1 h thermal annealing. The white and black lines are the vacancy (right-hand scale) and He (left-hand scale) profiles simulated by the SRIM code (Ref. 22).

Image of FIG. 2.
FIG. 2.

X-TEM images in off-Bragg condition of MBE samples implanted at 30 keV with at doses of (a) and (b) and annealed at for 1 h.

Image of FIG. 3.
FIG. 3.

HRXRD rocking curves of the as-grown and as-implanted MBE samples (prior to the thermal annealing process). The peak at 0° arises from the Si (001) substrate.

Image of FIG. 4.
FIG. 4.

X-TEM images of the sample implanted with (a) and annealed for (b) 5, (c) 600, and (d) 3600 s.

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/content/aip/journal/jap/104/2/10.1063/1.2955707
2008-07-16
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Role of C in the formation and kinetics of nanovoids induced by He+ implantation in Si
http://aip.metastore.ingenta.com/content/aip/journal/jap/104/2/10.1063/1.2955707
10.1063/1.2955707
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