X-TEM images in off-Bragg condition of (a) Si Cz and (b) MBE samples after implantation at 30 keV and , 1 h thermal annealing. The white and black lines are the vacancy (right-hand scale) and He (left-hand scale) profiles simulated by the SRIM code (Ref. 22).
X-TEM images in off-Bragg condition of MBE samples implanted at 30 keV with at doses of (a) and (b) and annealed at for 1 h.
HRXRD rocking curves of the as-grown and as-implanted MBE samples (prior to the thermal annealing process). The peak at 0° arises from the Si (001) substrate.
X-TEM images of the sample implanted with (a) and annealed for (b) 5, (c) 600, and (d) 3600 s.
Article metrics loading...
Full text loading...