Typical simulation results for morphology generation, showing the influence of annealing time: (a) Monte Carlo steps; (b) Monte Carlo steps.
Relation between the Ising model entropy and the interfacial area.
Simulated photocurrent curves for solar cells with different morphologies.
Relation between the short circuit current and the interfacial area.
Correlation function of a sample morphology.
TEM images of a typical PCBM/P3HT solar cell (a) before and (b) after annealing.
Relation between the correlation distance and reciprocal interfacial area.
Morphologies with the same interfacial area but different correlation distances.
Correlation distance as a function of the number of Monte Carlo steps.
Short circuit current as a function of the correlation distance. Error bars represent the standard deviations in the simulated morphologies and current values for the same number of Monte Carlo steps.
Short circuit current vs correlation distance with different exciton lifetimes. Square, circular, and triangular data points represent exciton lifetimes of , , and , respectively.
Experimental setting for simulation.
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