1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Quantum simulation of noise in silicon nanowire transistors
Rent:
Rent this article for
USD
10.1063/1.2956701
/content/aip/journal/jap/104/2/10.1063/1.2956701
http://aip.metastore.ingenta.com/content/aip/journal/jap/104/2/10.1063/1.2956701
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Structure of the silicon nanowire transistor.

Image of FIG. 2.
FIG. 2.

Changes of the lowest subband profile and chemical potential due to terminal biasing.

Image of FIG. 3.
FIG. 3.

(a) vs and (b) vs characteristics.

Image of FIG. 4.
FIG. 4.

Gate bias dependence of drain noise power at equilibrium.

Image of FIG. 5.
FIG. 5.

Illustration of shot noise generation in SNWT.

Image of FIG. 6.
FIG. 6.

Drain bias dependence of drain noise power with gate voltage of .

Image of FIG. 7.
FIG. 7.

(a) Electron density spectrum and (b) Fano factor and drain current spectrum at a bias of , .

Image of FIG. 8.
FIG. 8.

Drain bias dependence of drain noise power with gate voltage of .

Image of FIG. 9.
FIG. 9.

(a) Electron density spectrum and (b) Fano factor and drain current spectrum at a bias of , .

Image of FIG. 10.
FIG. 10.

Gate bias dependence of Fano factor with drain voltage of 0.2, 0.3, and 0.4 V.

Loading

Article metrics loading...

/content/aip/journal/jap/104/2/10.1063/1.2956701
2008-07-23
2014-04-24
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Quantum simulation of noise in silicon nanowire transistors
http://aip.metastore.ingenta.com/content/aip/journal/jap/104/2/10.1063/1.2956701
10.1063/1.2956701
SEARCH_EXPAND_ITEM