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Ultralow dielectric constant pSiCOH films prepared with tetramethylcyclotetrasiloxane as skeleton precursor
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10.1063/1.2959341
/content/aip/journal/jap/104/2/10.1063/1.2959341
http://aip.metastore.ingenta.com/content/aip/journal/jap/104/2/10.1063/1.2959341

Figures

Image of FIG. 1.
FIG. 1.

Structures of molecules used in the present study.

Image of FIG. 2.
FIG. 2.

FTIR spectra of as-deposited pSiCOH films prepared from at different substrate temperatures at . (a) Full spectra. [(b) and (c)] Expanded sections of the spectra.

Image of FIG. 3.
FIG. 3.

FTIR spectra of annealed pSiCOH films prepared from at different substrate temperatures at . (a) Full spectra. [(b) and (c)] Expanded sections of the spectra.

Image of FIG. 4.
FIG. 4.

Shrinkage during anneal of pSiCOH films deposited at two values vs deposition temperature.

Image of FIG. 5.
FIG. 5.

Dielectric constants of annealed pSiCOH films deposited at two values vs deposition temperature.

Image of FIG. 6.
FIG. 6.

Dielectric constants vs shrinkage of the films from Figs. 4 and 5.

Image of FIG. 7.
FIG. 7.

FTIR spectra of as-deposited pSiCOH films prepared from at different values and . (a) Full spectra. (b) Expanded section of the spectra. The film at was deposited at 5 W because at higher power, TMCTS was dissociated too much and the obtained value was high.

Image of FIG. 8.
FIG. 8.

FTIR spectra of annealed pSiCOH films prepared from at different values and . (a) Full spectra. [(b) and (c)] Expanded sections of the spectra.

Image of FIG. 9.
FIG. 9.

FTIR spectra of as-deposited films prepared from and at different values and . (a) Full spectra. [(b) and (c)] Expanded sections.

Image of FIG. 10.
FIG. 10.

FTIR spectra of annealed films prepared from and at different values and . (a) Full spectra. [(b) and (c)] Expanded sections.

Image of FIG. 11.
FIG. 11.

Dielectric constants of annealed films prepared at two values vs rf deposition power.

Image of FIG. 12.
FIG. 12.

FTIR spectra of films deposited from at and as a function of annealing time at . (a) Full spectra. [(b) and (c)] Expanded sections.

Tables

Generic image for table
Table I.

Optical gap and refractive index of films prepared with CPO.

Generic image for table
Table II.

Dielectric constants of films prepared with CPO after first and second anneals at .

Generic image for table
Table III.

Dielectric constants vs porogen concentration in plasma feed.

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/content/aip/journal/jap/104/2/10.1063/1.2959341
2008-07-24
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Ultralow dielectric constant pSiCOH films prepared with tetramethylcyclotetrasiloxane as skeleton precursor
http://aip.metastore.ingenta.com/content/aip/journal/jap/104/2/10.1063/1.2959341
10.1063/1.2959341
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