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Poly(3-hexylthiophene) thin-film transistors with variable polymer dielectrics for transfer-printed flexible electronics
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10.1063/1.2959821
    + View Affiliations - Hide Affiliations
    Affiliations:
    1 Department of Physics, University of Maryland, College Park, Maryland 20742, USA; Laboratory for Physical Sciences, University of Maryland, College Park, Maryland 20740, USA; and NanoCenter, University of Maryland, College Park, Maryland 20742, USA
    2 Department of Physics, University of Maryland, College Park, Maryland 20742, USA and Center for Superconductivity Research, University of Maryland, College Park, Maryland 20742, USA
    3 Department of Physics, University of Maryland, College Park, Maryland 20742, USA; NanoCenter, University of Maryland, College Park, Maryland 20742, USA; and Center for Superconductivity Research, University of Maryland, College Park, Maryland 20742, USA
    a) Electronic mail: hines@lps.umd.edu.
    J. Appl. Phys. 104, 024510 (2008); http://dx.doi.org/10.1063/1.2959821
/content/aip/journal/jap/104/2/10.1063/1.2959821
http://aip.metastore.ingenta.com/content/aip/journal/jap/104/2/10.1063/1.2959821

Figures

Image of FIG. 1.
FIG. 1.

Illustration of the transfer printing method for the fabrication of bottom gate/ bottom S/D OTFT devices onto flexible substrates.

Image of FIG. 2.
FIG. 2.

Optical image of transfer-printed OTFTs on a plastic (PET) substrate. For these devices, Au S/D and gate electrodes are separated by a thick PMMA dielectric layer. Starting at the left and moving clockwise, the four devices shown here have channel lengths of , 3, 6, and and a width .

Image of FIG. 3.
FIG. 3.

(a) Output characteristics of P3HT/PMMA/PET flexible OTFT with channel length and channel width . (b) Transfer characteristics of device in (a).

Image of FIG. 4.
FIG. 4.

Resistance vs channel length for the set of transfer-printed P3HT/PMMA/PET flexible OTFTs at various gate voltages (symbols). Lines are linear fits used to extract the channel resistance per length (slope) and contact resistance (intercept).

Image of FIG. 5.
FIG. 5.

Threshold voltage vs polar component of the surface energy for P3HT devices fabricated with PMMA, PS, PC, and PHS dielectric layers. Note that the threshold voltage for the devices fabricated with PHS (red square with arrow pointing toward larger voltage) is an estimate.

Tables

Generic image for table
Table I.

Device and fabrication parameters associated with the S/D electrodes and polymer dielectric layers.

Generic image for table
Table II.

Device properties of reference and flexible P3HT OTFTs.

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/content/aip/journal/jap/104/2/10.1063/1.2959821
2008-07-24
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Poly(3-hexylthiophene) thin-film transistors with variable polymer dielectrics for transfer-printed flexible electronics
http://aip.metastore.ingenta.com/content/aip/journal/jap/104/2/10.1063/1.2959821
10.1063/1.2959821
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