Illustration of the transfer printing method for the fabrication of bottom gate/ bottom S/D OTFT devices onto flexible substrates.
Optical image of transfer-printed OTFTs on a plastic (PET) substrate. For these devices, Au S/D and gate electrodes are separated by a thick PMMA dielectric layer. Starting at the left and moving clockwise, the four devices shown here have channel lengths of , 3, 6, and and a width .
(a) Output characteristics of P3HT/PMMA/PET flexible OTFT with channel length and channel width . (b) Transfer characteristics of device in (a).
Resistance vs channel length for the set of transfer-printed P3HT/PMMA/PET flexible OTFTs at various gate voltages (symbols). Lines are linear fits used to extract the channel resistance per length (slope) and contact resistance (intercept).
Threshold voltage vs polar component of the surface energy for P3HT devices fabricated with PMMA, PS, PC, and PHS dielectric layers. Note that the threshold voltage for the devices fabricated with PHS (red square with arrow pointing toward larger voltage) is an estimate.
Device and fabrication parameters associated with the S/D electrodes and polymer dielectric layers.
Device properties of reference and flexible P3HT OTFTs.
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