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Raman study of self-assembled InAs/InP quantum wire stacks with varying spacer thickness
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Image of FIG. 1.
FIG. 1.

Micro-Raman spectra of InAs/InP QWrs from sample HT2 in parallel and crossed polarizations along the directions [110] and .

Image of FIG. 2.
FIG. 2.

(a) Raman spectra samples LT3 and HT3. [(b) and (c)] Spacer thickness dependence of the frequency of the and IF vibrational modes of InAs/InP QWrs of both the LT and HT series. The frequency of the LO phonon mode of bulk InAs is indicated for comparison.

Image of FIG. 3.
FIG. 3.

Raman shift in the InAsP phonon mode as a function of the spacer thickness for (a) the LT and (b) the HT series. The incident and scattered polarizations are either perpendicular (dots) or parallel (triangles) to the QWr direction.

Image of FIG. 4.
FIG. 4.

(a) Raman spectra of the as-grown and annealed InAs/InP QWrs from sample HT1 under parallel polarization. [(b)–(d)] Raman peak frequency as a function of annealing temperature for InAs , IF phonon modes, and InAsP phonons of the alloy.

Image of FIG. 5.
FIG. 5.

(a) Micro-Raman spectra of InAs/InP QWrs recorded at room temperature with several laser wavelengths for sample LT2. (b) Intensity dependence of the and IF phonon modes.

Image of FIG. 6.
FIG. 6.

Frequencies of the IF optical phonons with for InAs QWrs with elliptical cross section embedded in an InP substrate as a function of the wire aspect ratio . The points present the experimental values of the IF phonon modes of the HT and LT series of the samples with .


Generic image for table
Table I.

Structure and growth parameters of the self-assembled InAs/InP QWr stacks. The number of stacked periods, the thickness of the InP spacer, and the growth temperature are indicated for each sample.

Generic image for table
Table II.

Parameters used to calculate the dispersion curves of Fig. 5.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Raman study of self-assembled InAs/InP quantum wire stacks with varying spacer thickness