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Comparative study of tunneling currents through silicon dioxide and high- dielectric hafnium oxide partly embedded with nanocrystals and nanotubes in metal oxide semiconductor structures
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10.1063/1.2963705
/content/aip/journal/jap/104/3/10.1063/1.2963705
http://aip.metastore.ingenta.com/content/aip/journal/jap/104/3/10.1063/1.2963705
/content/aip/journal/jap/104/3/10.1063/1.2963705
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/content/aip/journal/jap/104/3/10.1063/1.2963705
2008-08-12
2014-08-01
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Comparative study of tunneling currents through silicon dioxide and high-κ dielectric hafnium oxide partly embedded with nanocrystals and nanotubes in metal oxide semiconductor structures
http://aip.metastore.ingenta.com/content/aip/journal/jap/104/3/10.1063/1.2963705
10.1063/1.2963705
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