1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Comparative study of tunneling currents through silicon dioxide and high- dielectric hafnium oxide partly embedded with nanocrystals and nanotubes in metal oxide semiconductor structures
Rent:
Rent this article for
USD
10.1063/1.2963705
/content/aip/journal/jap/104/3/10.1063/1.2963705
http://aip.metastore.ingenta.com/content/aip/journal/jap/104/3/10.1063/1.2963705
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic structure of MOs transistor, the gate dielectric is divided between pure and embedded layers.

Image of FIG. 2.
FIG. 2.

FN plot of pure and embedded with nc-Si and CNTs.

Image of FIG. 3.
FIG. 3.

FN plot of high- and embedded with nanoparticles nc-Si and CNTs.

Image of FIG. 4.
FIG. 4.

FN tunneling current in pure dielectric and nanoparticles embedded composite dielectrics.

Image of FIG. 5.
FIG. 5.

FN tunneling current in pure and in embedded with nanoparticles.

Image of FIG. 6.
FIG. 6.

Direct tunneling current at positive gate voltages with pure and composite gate dielectrics.

Image of FIG. 7.
FIG. 7.

Direct tunneling current at negative gate voltages with pure and composite high- gate dielectrics.

Loading

Article metrics loading...

/content/aip/journal/jap/104/3/10.1063/1.2963705
2008-08-12
2014-04-18
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Comparative study of tunneling currents through silicon dioxide and high-κ dielectric hafnium oxide partly embedded with nanocrystals and nanotubes in metal oxide semiconductor structures
http://aip.metastore.ingenta.com/content/aip/journal/jap/104/3/10.1063/1.2963705
10.1063/1.2963705
SEARCH_EXPAND_ITEM