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Electronic and optical properties of 530 nm strain-compensated hybrid InGaN/InGaN/ZnO quantum well light-emitting diodes
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10.1063/1.2968259
/content/aip/journal/jap/104/3/10.1063/1.2968259
http://aip.metastore.ingenta.com/content/aip/journal/jap/104/3/10.1063/1.2968259
/content/aip/journal/jap/104/3/10.1063/1.2968259
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/content/aip/journal/jap/104/3/10.1063/1.2968259
2008-08-14
2014-09-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electronic and optical properties of 530 nm strain-compensated hybrid InGaN/InGaN/ZnO quantum well light-emitting diodes
http://aip.metastore.ingenta.com/content/aip/journal/jap/104/3/10.1063/1.2968259
10.1063/1.2968259
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