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Electronic and optical properties of 530 nm strain-compensated hybrid InGaN/InGaN/ZnO quantum well light-emitting diodes
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10.1063/1.2968259
/content/aip/journal/jap/104/3/10.1063/1.2968259
http://aip.metastore.ingenta.com/content/aip/journal/jap/104/3/10.1063/1.2968259
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Figures

Image of FIG. 1.
FIG. 1.

(a) In composition in the well as a function of the well width to give the C1-HH1 transition wavelength of 530 nm and (b) strain in the well as a function of the well width for a strain-compensated InGaN/InGaN/ZnO QW structure. For comparison, the result for the conventional InGaN/GaN QW structure is also plotted.

Image of FIG. 2.
FIG. 2.

(a) Peak wavelength as a function of the carrier density for strain-compensated InGaN/InGaN/ZnO and InGaN/GaN QW structures. The peak wavelength gradually decreases with increasing carrier density.

Image of FIG. 3.
FIG. 3.

(a) Optical matrix elements as a function of the in-plane wave vector and (b) spontaneous emission spectra for strain-compensated InGaN/InGaN/ZnO and InGaN/GaN QW structures. The self-consistent solutions are obtained at the sheet carrier density of .

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/content/aip/journal/jap/104/3/10.1063/1.2968259
2008-08-14
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electronic and optical properties of 530 nm strain-compensated hybrid InGaN/InGaN/ZnO quantum well light-emitting diodes
http://aip.metastore.ingenta.com/content/aip/journal/jap/104/3/10.1063/1.2968259
10.1063/1.2968259
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