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Detailed arsenic concentration profiles at interfaces
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10.1063/1.2967713
/content/aip/journal/jap/104/4/10.1063/1.2967713
http://aip.metastore.ingenta.com/content/aip/journal/jap/104/4/10.1063/1.2967713
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Figures

Image of FIG. 1.
FIG. 1.

-contrast images and EELS line scans taken simultaneously at magnifications of (a) and (b) . For each -contrast image, ten EELS spectra were acquired subsequently with 30 s integration time each. Each EELS spectrum corresponds to the average information of the area between two dark lines in the -contrast image [(a) and (b) ]. The bar plot on the right hand side of the -contrast image is the corresponding atomic ratio between As and Si acquired by EELS. Strain effects were not removed.

Image of FIG. 2.
FIG. 2.

Arsenic profile in the vicinity of the interface measured by -contrast and EELS. The maximum of the -contrast profile was set equal to the EELS maximum to eliminate the baseline uncertainty in the -contrast profile.

Image of FIG. 3.
FIG. 3.

-contrast image taken (a) without mask and (b) with a mask that enlarges the inner angle of the annular detector to remove strain contrast. The dashed line indicates the area from where the insert of the intensity profile was derived.

Image of FIG. 4.
FIG. 4.

Fluorescence signal of arsenic as a function of the incidence angle for the different etch steps performed at the standard samples. After each etch step the intensity at large angles, which is an accurate measure of the total sheet concentration of arsenic, has decreased. The lines are the corresponding simulated curves.

Image of FIG. 5.
FIG. 5.

Arsenic concentration profile across the interface as measured by calibrated EELS, GI-XRF, and SIMS. GI-XRF measurements were done on the standard samples (Std) as well as on specially patterned samples (Pat). The SIMS measurements were aligned at the interface with the EELS and GI-XRF profiles.

Image of FIG. 6.
FIG. 6.

Comparison of the SIMS measurements from NCSU (dashed line) and MATIS (solid line). The dotted line at a concentration of separates the pile-up peak from the “regular” concentration. Also shown is a noncalibrated measurement of the oxygen concentration from MATIS with arbitrary concentration scaling.

Image of FIG. 7.
FIG. 7.

Rutherford backscattering spectra for (a) the beam in random direction and (b) with the beam aligned along the channeling direction of the sample with and without oxide as indicated. (c) shows the oxygen and silicon signals in channeling configuration.

Image of FIG. 8.
FIG. 8.

XPS spectra of samples with and without surface oxide as indicated in the figure for (a) electrons and (b) electrons.

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/content/aip/journal/jap/104/4/10.1063/1.2967713
2008-08-20
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Detailed arsenic concentration profiles at Si/SiO2 interfaces
http://aip.metastore.ingenta.com/content/aip/journal/jap/104/4/10.1063/1.2967713
10.1063/1.2967713
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