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Electrical behavior of memory devices based on fluorene-containing organic thin films
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10.1063/1.2968551
/content/aip/journal/jap/104/4/10.1063/1.2968551
http://aip.metastore.ingenta.com/content/aip/journal/jap/104/4/10.1063/1.2968551
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Chemical structure of compound 1, 7-{4-[5-(4-tert-butylphenyl)-1,3,4-oxadiazol-2-yl]phenyl}-9,9-dihexyl--diphenyl-fluoren-2-amine used in this study.

Image of FIG. 2.
FIG. 2.

Current through a new Al/compound 1/Al device as a function of organic layer thickness for two applied dc voltages.

Image of FIG. 3.
FIG. 3.

Current vs voltage characteristics for a new compound 1/Al device. Measurements taken by scanning to progressively higher voltages (measurement scheme A: unipolar voltage sweep).

Image of FIG. 4.
FIG. 4.

(a) Electrical data in Fig. 3 plotted in the form versus . (b) Electrical data in Fig. 3 plotted in the form vs . (c) Electrical data in Fig. 3 plotted in the form vs .

Image of FIG. 5.
FIG. 5.

Current vs voltage characteristics for a new compound 1/Al device. Measurements taken by scanning to progressively higher voltages (measurement scheme A: unipolar voltage sweep).

Image of FIG. 6.
FIG. 6.

Current vs voltage characteristics of an compound 1/Al device following the formation process. Voltage scan from (on the top electrode) (full line) and to (dotted line).

Image of FIG. 7.
FIG. 7.

Log(current) vs log(voltage) data for compound 1/Al in the OFF (lower set of curves) and ON states after application of write pulses and erase pulses.

Image of FIG. 8.
FIG. 8.

Current through a new Al/compound device as a function of organic layer thickness for two applied dc voltages.

Image of FIG. 9.
FIG. 9.

Current vs voltage characteristics for Al/compound structures following device formation. The different curves correspond to different organic film thicknesses.

Image of FIG. 10.
FIG. 10.

Read current (at ) following write and erase pulses for Al/compound structures as a function of the thickness of the organic film.

Image of FIG. 11.
FIG. 11.

Log(current) vs log(voltage) for Al/compound structures in their OFF states. The different curves correspond to different thicknesses of the organic film.

Image of FIG. 12.
FIG. 12.

Current vs voltage characteristics for an compound 1/Al structure. Measurement scheme B (bipolar voltage sweep). (a) Normal scans. (b) Reverse mode scans.

Image of FIG. 13.
FIG. 13.

Current vs voltage characteristics for an compound 1/Al structure. Measurement scheme B (bipolar voltage sweep). (a) Normal scans. (b) Reverse scans.

Image of FIG. 14.
FIG. 14.

Current vs voltage characteristics, measurement scheme B (bipolar voltage sweep), initial reverse scans, for Al/compound structures. The different curves correspond to different organic film thicknesses.

Image of FIG. 15.
FIG. 15.

Current vs voltage characteristics for compound structure. Measurement scheme B (bipolar voltage sweep). (a) Normal scans. (b) Reverse scans.

Image of FIG. 16.
FIG. 16.

Effect of the top electrode deposition rate (TEDR) on the current vs voltage characteristics for compound 1/Al structures. Second scans in the normal mode. Measurement scheme B (bipolar voltage sweep).

Image of FIG. 17.
FIG. 17.

Effect of TEDR on the current vs voltage characteristics for compound structures. Measurement scheme B (bipolar voltage sweep). Initial scan in the normal mode. (a) Semilogarithmic scale. (b) Linear scale.

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/content/aip/journal/jap/104/4/10.1063/1.2968551
2008-08-28
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electrical behavior of memory devices based on fluorene-containing organic thin films
http://aip.metastore.ingenta.com/content/aip/journal/jap/104/4/10.1063/1.2968551
10.1063/1.2968551
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