1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Self-consistent gain analysis of type-II ‘’ InGaN–GaNAs quantum well lasers
Rent:
Rent this article for
USD
10.1063/1.2970107
/content/aip/journal/jap/104/4/10.1063/1.2970107
http://aip.metastore.ingenta.com/content/aip/journal/jap/104/4/10.1063/1.2970107

Figures

Image of FIG. 1.
FIG. 1.

Energy band lineups and wave functions of (a) type-I QW and (b) type-II QW. Solid lines correspond to self-consistent calculation by taking into account the carrier screening effect (for ). Dash lines correspond to band lineups without self-consistent calculation.

Image of FIG. 2.
FIG. 2.

Square of momentum matrix elements as a function of the in-plane wave vector in the TE polarization for (a) type-I QW and (b) type-II QW. The carrier density is .

Image of FIG. 3.
FIG. 3.

Square of momentum matrix elements at zone center using the self-consistent model as a function of the carrier density for (a) type-I QW and (b) type-II QW.

Image of FIG. 4.
FIG. 4.

Spontaneous emission spectra for type-I QW and type-II QW as increasing carrier density with self-consistent model calculation.

Image of FIG. 5.
FIG. 5.

Radiative current density as a function of carrier density for type-I QW and type-II QW.

Image of FIG. 6.
FIG. 6.

Optical gain spectra for type-I QW and type-II QW as increasing carrier density with self-consistent model calculation.

Image of FIG. 7.
FIG. 7.

Peak material gain as a function of carrier density for type-I QW and type-II QW at room temperature.

Image of FIG. 8.
FIG. 8.

Differential gain as a function of carrier density for type-I QW and type-II QW at room temperature.

Image of FIG. 9.
FIG. 9.

Peak material gain as a function of current density for type-I QW and type-II QW at room temperature.

Tables

Generic image for table
Table I.

Material parameters for GaN and InN. The values are taken from Refs. 26–31.

Generic image for table
Table II.

The total threshold current density for type-I QW and type-II QW with various monomolecular recombination rates .

Loading

Article metrics loading...

/content/aip/journal/jap/104/4/10.1063/1.2970107
2008-08-27
2014-04-17
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Self-consistent gain analysis of type-II ‘W’ InGaN–GaNAs quantum well lasers
http://aip.metastore.ingenta.com/content/aip/journal/jap/104/4/10.1063/1.2970107
10.1063/1.2970107
SEARCH_EXPAND_ITEM