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Two-trap model for low voltage stress-induced leakage current in ultrathin SiON dielectrics
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10.1063/1.2969791
/content/aip/journal/jap/104/5/10.1063/1.2969791
http://aip.metastore.ingenta.com/content/aip/journal/jap/104/5/10.1063/1.2969791
/content/aip/journal/jap/104/5/10.1063/1.2969791
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/content/aip/journal/jap/104/5/10.1063/1.2969791
2008-09-10
2014-10-30
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Two-trap model for low voltage stress-induced leakage current in ultrathin SiON dielectrics
http://aip.metastore.ingenta.com/content/aip/journal/jap/104/5/10.1063/1.2969791
10.1063/1.2969791
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