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Electronic properties of doped silicon nanocrystal films
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10.1063/1.2973399
/content/aip/journal/jap/104/5/10.1063/1.2973399
http://aip.metastore.ingenta.com/content/aip/journal/jap/104/5/10.1063/1.2973399
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Scanning electron micrographs (top view) of spin-coated films of undoped 20 nm Si ncs after laser annealing at the indicated energy densities.

Image of FIG. 2.
FIG. 2.

Cross-sectional scanning electron micrograph of a 500 nm spin-coated film of boron-doped 20 nm Si ncs on a silicon substrate after laser annealing at .

Image of FIG. 3.
FIG. 3.

(a) Raman spectra of as-deposited and laser annealed undoped Si ncs and of a reference. (b) Raman peak position and FWHM from (a) as a function of the laser energy density. The dashed and dotted lines give the calculated values as a function of the Si nc size (top axis) from Ref. 24. (c) Raman spectra of highly B- and P-doped Si nc film lasers annealed at (symbols). The full lines are Fano line fits (including the local vibrational modes in the case of B).

Image of FIG. 4.
FIG. 4.

(a) Electrical conductivity of undoped, B-doped, and P-doped layers of Si ncs as a function of the laser energy density. (b) Electrical conductivity of B- and P-doped layers of Si ncs before and after laser annealing at as a function of the doping concentration. The lines are guides for the eyes. The dotted line corresponds to the dashed line shifted to higher doping concentrations by a factor of 20.

Image of FIG. 5.
FIG. 5.

EPR dbd density of Si nc film lasers annealed at as a function of the B concentration.

Image of FIG. 6.
FIG. 6.

(a) Temperature dependent conductivity of laser annealed Si nc layers with different B concentrations. (b) Thermal activation energies derived from (a) vs the doping concentration (full circles). In addition, data of laser annealed P-doped Si ncs (open circles) and of B-doped CVD are displayed (crosses, Ref. 32). The dashed line is a calculation from Ref. 32 and the dotted line results from shifting the dashed curve to higher doping concentrations by a factor of 50.

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/content/aip/journal/jap/104/5/10.1063/1.2973399
2008-09-03
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electronic properties of doped silicon nanocrystal films
http://aip.metastore.ingenta.com/content/aip/journal/jap/104/5/10.1063/1.2973399
10.1063/1.2973399
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