Scanning electron micrographs (top view) of spin-coated films of undoped 20 nm Si ncs after laser annealing at the indicated energy densities.
Cross-sectional scanning electron micrograph of a 500 nm spin-coated film of boron-doped 20 nm Si ncs on a silicon substrate after laser annealing at .
(a) Raman spectra of as-deposited and laser annealed undoped Si ncs and of a reference. (b) Raman peak position and FWHM from (a) as a function of the laser energy density. The dashed and dotted lines give the calculated values as a function of the Si nc size (top axis) from Ref. 24. (c) Raman spectra of highly B- and P-doped Si nc film lasers annealed at (symbols). The full lines are Fano line fits (including the local vibrational modes in the case of B).
(a) Electrical conductivity of undoped, B-doped, and P-doped layers of Si ncs as a function of the laser energy density. (b) Electrical conductivity of B- and P-doped layers of Si ncs before and after laser annealing at as a function of the doping concentration. The lines are guides for the eyes. The dotted line corresponds to the dashed line shifted to higher doping concentrations by a factor of 20.
EPR dbd density of Si nc film lasers annealed at as a function of the B concentration.
(a) Temperature dependent conductivity of laser annealed Si nc layers with different B concentrations. (b) Thermal activation energies derived from (a) vs the doping concentration (full circles). In addition, data of laser annealed P-doped Si ncs (open circles) and of B-doped CVD are displayed (crosses, Ref. 32). The dashed line is a calculation from Ref. 32 and the dotted line results from shifting the dashed curve to higher doping concentrations by a factor of 50.
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