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The role of Ca traces in the passivation of silicon dioxide dielectrics for electron transport in pentacene organic field effect transistors
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10.1063/1.2973455
/content/aip/journal/jap/104/5/10.1063/1.2973455
http://aip.metastore.ingenta.com/content/aip/journal/jap/104/5/10.1063/1.2973455

Figures

Image of FIG. 1.
FIG. 1.

Cross section of the OFET device structure.

Image of FIG. 2.
FIG. 2.

(a) Output characteristic and (b) transfer characteristic of a pentacene OFET comprising Ca drain/source contacts as well as an Ca interlayer between the dielectric and the organic semiconductor.

Image of FIG. 3.
FIG. 3.

dc charging of a MIS diode structure containing a pristine / pentacene interface at . Inset: Cross section of the MIS diode structure.

Image of FIG. 4.
FIG. 4.

Electron mobility and threshold voltage in dependence on the Ca interlayer thickness. The values have been obtained for devices unexposed to thermal or electrical stress.

Image of FIG. 5.
FIG. 5.

emission spectra for different Ca interlayer thicknesses. The measurements were conducted on . The spectra have been corrected with respect to the metallic Ca component at .

Image of FIG. 6.
FIG. 6.

(a) Intensity normalized emission spectra, corrected with respect to the substrate emission line, for different Ca interlayer thicknesses. (b) Intensity normalized emission spectrum, corrected with respect to the substrate component.

Image of FIG. 7.
FIG. 7.

and binding energy values in dependence on the adsorbate thickness. A of 245 eV has been added to the binding energy.

Image of FIG. 8.
FIG. 8.

Electron mobility and threshold voltage in dependence on the Ca interlayer thickness. The values are obtained for OFETs exposed to the electrical cyclic conditioning step. Inset: and at RT for an OFET comprising an Ca interlayer in dependence of a substrate temperature treatment.

Image of FIG. 9.
FIG. 9.

emission spectrum of a Ca layer on (a) in its pristine (b) and in its annealed state ( at ).

Image of FIG. 10.
FIG. 10.

Comparison of the output characteristics of pentacene OFETs comprising a Ca interlayer in their pristine, annealed ( at ) and electrically cyclic conditioned state.

Tables

Generic image for table
Table I.

Difference in binding energy between Ca and –CaO/CaOH in a CaNi5 alloy. Resulting –CaO and –CaOH binding energies for Ca on .

Generic image for table
Table II.

Comparison in OFET parameters for devices containing a Ca interlayer in their pristine, electrically conditioned and annealed state.

Generic image for table
Table III.

Comparison in device parameters for a -type pentacene OFET in its pristine and in its annealed state.

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/content/aip/journal/jap/104/5/10.1063/1.2973455
2008-09-04
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: The role of Ca traces in the passivation of silicon dioxide dielectrics for electron transport in pentacene organic field effect transistors
http://aip.metastore.ingenta.com/content/aip/journal/jap/104/5/10.1063/1.2973455
10.1063/1.2973455
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