Cross section of the OFET device structure.
(a) Output characteristic and (b) transfer characteristic of a pentacene OFET comprising Ca drain/source contacts as well as an Ca interlayer between the dielectric and the organic semiconductor.
dc charging of a MIS diode structure containing a pristine / pentacene interface at . Inset: Cross section of the MIS diode structure.
Electron mobility and threshold voltage in dependence on the Ca interlayer thickness. The values have been obtained for devices unexposed to thermal or electrical stress.
emission spectra for different Ca interlayer thicknesses. The measurements were conducted on . The spectra have been corrected with respect to the metallic Ca component at .
(a) Intensity normalized emission spectra, corrected with respect to the substrate emission line, for different Ca interlayer thicknesses. (b) Intensity normalized emission spectrum, corrected with respect to the substrate component.
and binding energy values in dependence on the adsorbate thickness. A of 245 eV has been added to the binding energy.
Electron mobility and threshold voltage in dependence on the Ca interlayer thickness. The values are obtained for OFETs exposed to the electrical cyclic conditioning step. Inset: and at RT for an OFET comprising an Ca interlayer in dependence of a substrate temperature treatment.
emission spectrum of a Ca layer on (a) in its pristine (b) and in its annealed state ( at ).
Comparison of the output characteristics of pentacene OFETs comprising a Ca interlayer in their pristine, annealed ( at ) and electrically cyclic conditioned state.
Difference in binding energy between Ca and –CaO/CaOH in a CaNi5 alloy. Resulting –CaO and –CaOH binding energies for Ca on .
Comparison in OFET parameters for devices containing a Ca interlayer in their pristine, electrically conditioned and annealed state.
Comparison in device parameters for a -type pentacene OFET in its pristine and in its annealed state.
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