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Influence of the (111) twinning on the formation of diamond cubic/diamond hexagonal heterostructures in Cu-catalyzed Si nanowires
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10.1063/1.2976338
/content/aip/journal/jap/104/6/10.1063/1.2976338
http://aip.metastore.ingenta.com/content/aip/journal/jap/104/6/10.1063/1.2976338

Figures

Image of FIG. 1.
FIG. 1.

(a) BFSTEM general view of a Si NW with lamellar twinning. (b) HRTEM micrograph of the twin segments. (c) Magnified detail of the squared region in (b). (d) Indexed power spectrum obtained in (c). (e) 3D atomic model proposed following theoretical models on III-V semiconductor NWs (model A) (a 3D animated movie of the present model can be found in http://nun97.el.ub.es/~arbiol/Work001.html). (f) Same model in perspective.

Image of FIG. 2.
FIG. 2.

(a) Plan view TEM micrograph of a Si NW. (b) HAADF-STEM image of a twinned NW. (c) Selected area electron diffraction pattern obtained in the circled area in (b). (d) Intensity profile obtained from the dashed line in (b). (e) Experimental 3D model obtained after indexation and morphology analysis (model b) (a 3D animated movie of the present model can be found in http://nun97.el.ub.es/~arbiol/Work001.html). (f) Same model rotated around the growth axis ( projection). (g) Same model in perspective.

Image of FIG. 3.
FIG. 3.

(a) HRTEM micrograph of the Si I/Si IV/Si I heterostructure. (b) Magnified detail of the squared region in (a). (c) Indexed power spectrum obtained in (b). (a)–(c) were published in Ref. 29. (d) Experimental 3D model obtained after indexation and morphology analysis of the heterostructure (model c) (a 3D animated movie of the present model can be found in http://nun97.el.ub.es/~arbiol/Work001.html). (e) Same model rotated around the growth axis ( projection). (f) Same model in perspective.

Image of FIG. 4.
FIG. 4.

(a) Regular stacking of close-packed layers in diamond cubic Si (Si I polytype). (b) Cubic close-packed stacking with a twin , with “/” and dashed line in the figure denoting the twin. , , and correspond to the , , and planes after the twin rotation along the growth axis. (c) or equally arrangement of the planes on the diamond hexagonal or wurtzite structure (Si IV polytype), dashed lines denoting the inverse domains due to twins. (d) Schematics of the energy position of the minimum and maximum of the conduction and valence bands, respectively, of the Si I / Si IV heterostructure according to Refs. 59 and 60. It should be noted that the positions correspond to different valleys in the reciprocal space. (e) Similar band alignment diagram for a quantum heterostructure, formed by a single Si IV unit (0.313 nm) (marked between dashed lines), generated by a rotational twin. As shown in the paper, the thickness of the generated QW can change depending on the number of Si IV units .

Image of FIG. 5.
FIG. 5.

(a) TEM general view of a synthesized NW. (b) HRTEM detail of the twin segments. (c) Magnified detail of the squared region in (b) showing a multitwinned segment leading to a diamond hexagonal local region. (d) Indexed power spectrum obtained in (c).

Tables

Generic image for table
Table I.

Indexation of the spots corresponding to the segment in Fig. 1(d).

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Table II.

Indexation of the spots corresponding to the segment in Fig. 1(d).

Generic image for table
Table III.

Indexation of the spots corresponding to the segment in Fig. 4(c).

Generic image for table
Table IV.

Indexation of the spots corresponding to the segment in Fig. 4(c).

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/content/aip/journal/jap/104/6/10.1063/1.2976338
2008-09-24
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Influence of the (111) twinning on the formation of diamond cubic/diamond hexagonal heterostructures in Cu-catalyzed Si nanowires
http://aip.metastore.ingenta.com/content/aip/journal/jap/104/6/10.1063/1.2976338
10.1063/1.2976338
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