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Energy-band structure and optical gain in strained InAs(N)/GaSb/InAs(N) quantum well lasers.
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10.1063/1.2977677
/content/aip/journal/jap/104/6/10.1063/1.2977677
http://aip.metastore.ingenta.com/content/aip/journal/jap/104/6/10.1063/1.2977677

Figures

Image of FIG. 1.
FIG. 1.

Band profiles, energy levels, and selected wave function components for one period of the mid-IR structure; (a) and (b) designed for .

Image of FIG. 2.
FIG. 2.

Conduction, valence, and split-of band structure of the dilute-N InAsN/GaSb/InAsN (solid line) and N-free InAs/GaSb/InAs (dashed line) laser structures calculated using ten-band model and eight-band model, respectively.

Image of FIG. 3.
FIG. 3.

Room temperature optical gain spectrum vs photon energy at different carrier injection densities (given in units) calculated for dilute-N InAsN/GaSb/InAsN (solid line) and N-free InAs/GaSb/InAs (dashed line) laser structures.

Image of FIG. 4.
FIG. 4.

Left axis: room temperature maximum gain vs injected carrier density for the dilute-N (solid line) and the N-free (dashed line) laser structures. Right axis: relative difference between the maximum gains for the two laser structures as a function of carrier densities.

Tables

Generic image for table
Table I.

Calculated modified Luttinger parameters.

Generic image for table
Table II.

Material parameters used in the calculations at 300 K are taken from Ref. 29 The definitions of these different parameters are as in Ref. 29

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/content/aip/journal/jap/104/6/10.1063/1.2977677
2008-09-22
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Energy-band structure and optical gain in strained InAs(N)/GaSb/InAs(N) quantum well lasers.
http://aip.metastore.ingenta.com/content/aip/journal/jap/104/6/10.1063/1.2977677
10.1063/1.2977677
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