Band profiles, energy levels, and selected wave function components for one period of the mid-IR structure; (a) and (b) designed for .
Conduction, valence, and split-of band structure of the dilute-N InAsN/GaSb/InAsN (solid line) and N-free InAs/GaSb/InAs (dashed line) laser structures calculated using ten-band model and eight-band model, respectively.
Room temperature optical gain spectrum vs photon energy at different carrier injection densities (given in units) calculated for dilute-N InAsN/GaSb/InAsN (solid line) and N-free InAs/GaSb/InAs (dashed line) laser structures.
Left axis: room temperature maximum gain vs injected carrier density for the dilute-N (solid line) and the N-free (dashed line) laser structures. Right axis: relative difference between the maximum gains for the two laser structures as a function of carrier densities.
Calculated modified Luttinger parameters.
Material parameters used in the calculations at 300 K are taken from Ref. 29 The definitions of these different parameters are as in Ref. 29
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