(a) Measured , (b) change in trapped positive charge density , (c) measured interface state density , and (d) change in interface state density of BN, MN, and TMN samples as a function of stress time under of constant voltage stress at 398 K.
(a) The capacitance-voltage curves of TMN samples prepared with , 2, and 4, and (b) the interface state density as a function of .
(a) Change in trapped positive charge density with initial value of trapped positive charge density and (b) change in interface state density with initial value of interface state density as a function of for TMN sample after 5 min of voltage stress at RT with constant voltage stress.
(a) Arrhenius plot of the trapped positive charge generation and (b) after 3 min of voltage stress with stress for and TMN sample prepared at .
Schematic drawing explains the proposed dielectric degradation mechanisms.
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