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The effects of nitrogen profile and concentration on negative bias temperature instability of plasma enhanced atomic layer deposition prepared by in situ nitridation
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10.1063/1.2978360
/content/aip/journal/jap/104/6/10.1063/1.2978360
http://aip.metastore.ingenta.com/content/aip/journal/jap/104/6/10.1063/1.2978360
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Measured , (b) change in trapped positive charge density , (c) measured interface state density , and (d) change in interface state density of BN, MN, and TMN samples as a function of stress time under of constant voltage stress at 398 K.

Image of FIG. 2.
FIG. 2.

(a) The capacitance-voltage curves of TMN samples prepared with , 2, and 4, and (b) the interface state density as a function of .

Image of FIG. 3.
FIG. 3.

(a) Change in trapped positive charge density with initial value of trapped positive charge density and (b) change in interface state density with initial value of interface state density as a function of for TMN sample after 5 min of voltage stress at RT with constant voltage stress.

Image of FIG. 4.
FIG. 4.

(a) Arrhenius plot of the trapped positive charge generation and (b) after 3 min of voltage stress with stress for and TMN sample prepared at .

Image of FIG. 5.
FIG. 5.

Schematic drawing explains the proposed dielectric degradation mechanisms.

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/content/aip/journal/jap/104/6/10.1063/1.2978360
2008-09-22
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: The effects of nitrogen profile and concentration on negative bias temperature instability of plasma enhanced atomic layer deposition HfOxNy prepared by in situ nitridation
http://aip.metastore.ingenta.com/content/aip/journal/jap/104/6/10.1063/1.2978360
10.1063/1.2978360
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