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Thermal diffusivity study in supported epitaxial InN thin films by the traveling-wave technique
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Image of FIG. 1.
FIG. 1.

X-ray diffraction (XRD) spectra for InN films grown on (a) GaN/sapphire, (b) sapphire, and (c) ITO coated glass at 823, 823, and 623 K, respectively. Respective insets show the morphology of the InN films through cross-sectional SEM images.

Image of FIG. 2.
FIG. 2.

Variation of thermal diffusivity as a function of film thickness for InN thin films grown on (▼) GaN/sapphire at 823K, (△) sapphire at 823K, (◼) GaN/sapphire at 723K, and (◯) ITO/glass at 623K. Inset shows the variation of the phase difference as a function of the distance from the IR source [Eq. (1)], the slope of which yields the value of .

Image of FIG. 3.
FIG. 3.

XRD data showing InN (002) signals from InN thin films with thicknesses (◇) 330 nm, (◯) 600 nm, and (―) 900 nm. Inset shows the full XRD spectra of the InN samples grown on GaN/sapphire substrates.

Image of FIG. 4.
FIG. 4.

Raman spectroscopy data for epitaxial InN thin films with thicknesses of 900 nm (top) and 330 nm (bottom). The insets show the schematic of (inset, top) and (high) (inset, bottom) vibration directions with respect to the InN (0002) growth direction.

Image of FIG. 5.
FIG. 5.

XRD rocking curves for InN layers grown on (a) GaN/sapphire at 823 K, (b) sapphire at 823 K, (c) GaN/sapphire at 723 K, and (d) GaN/sapphire at 623 K.


Generic image for table
Table I.

InN sample specification and fitting parameters according to Eq. (2). Symbols are explained in text


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Thermal diffusivity study in supported epitaxial InN thin films by the traveling-wave technique