(a) Schematic process flow of the experiment. (b) Top view SEM image of porous PS matrix after plasma etching. (c) Statistical size distribution of PMMA holes after plasma etching.
SEM images of the phase change nanodot arrays for different materials: (a) GeSb nanodots, (b) GST nanodots, and (c) AIST nanodots.
XRD peak intensity vs temperature results for the 15 nm thick GeSb film (a) and the GeSb nanodot arrays (b). The samples were heated to at . The scan shows the (003) peak for blanket film, while both (003) and (012) peaks were observed for the nanodot sample.
High resolution TEM image of a single GeSb nanodot after thermal annealing up to . Lattice fringes in the nanodot indicate crystallization.
XRD peak intensity vs temperature results for the 15 nm thick GST blanket film (a) and the GST nanodot arrays (b). The samples were heated to at . The scan displays two phase transitions for blanket GST film, with peaks (111) and (200) showing up for the metastable fcc phase and (004) and (101) for the stable hexagonal phase. For the nanodot sample, no obvious fcc phase is observed. Some unknown phases show up at high temperature.
XRD peak intensity vs temperature for the 50 nm thick AIST film (a) and the AIST nanodot arrays (b). The samples were heated to at . The scan shows several peaks at crystallization for blanket AIST sample. For the nanodot sample, no obvious phase is observed from the peak intensity figure. However clear (103) peak does show up in scan.
scans of AIST nanodot array before and after heating to at .
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