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[(a) and (c)] Typical low-magnification TEM images of ZnO NWs before and after 10 kV Ti-PIII, respectively. Insets are the corresponding SAED patterns. [(b) and (d)] HRTEM images of the corresponding ZnO NWs.
(a) S chematic diagram and SEM image of a single ZnO NW FET. (b) PL spectra of the as-grown ZnO NW and the ZnO NWs after different Ti-PIII treatments. The insets show the absorption of ZnO NWs before and after 10 kV Ti-PIII.
[(a)–(c)] curves of single as-grown ZnO NW and ZnO NW at different Ti-PIII treatments. [(d)–(f)] curves of single as-grown ZnO NW and ZnO NW at different Ti-PIII statuses.
curve for the same nanowire at large biases. Inset: SEM image of the failed ZnO NW, showing the failure site.
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