SHG spectra for an 11 nm film on Si(100), (a) as deposited (sample A1) and (b) after anneal (sample A2). The solid lines are fits to the data using a superposition of three CP-like resonances. The dashed lines represent the individual resonances. Data were obtained at polarized fundamental and SHG radiation using a laser power at the sample of 40 mW (fluence per pulse). In the inset in (b) the SHG spectra for sample A1 (open circles), sample A2 (closed circles), and an annealed 26 nm thick film on Si(100) (open squares, sample B) are shown on the same scale.
(a) EFISH intensity at a SHG photon energy of 3.40 eV as a function of negative fixed charge density in . The relation is calibrated and normalized using the CP parameters for an annealed 26 nm film on Si(100) (sample B) with a known . A1 and A2 indicate the charge and EFISH intensities for an 11 nm film on Si(100) before and after anneal, respectively. (b) Schematic of the interface with Si SCR and interfacial .
(a) Time-dependent SHG intensity for 11 nm on Si(100) before (open circles, A1) and after anneal (closed circles, A2) for a fundamental photon energy of 1.71 eV, and an average laser power of 100 mW. Between the laser beam was blocked. The insets show the SHG intensity during the second period of illumination in greater detail. (b) Energy diagram illustrating photon induced charge injection.
(a) Laser power dependence of the three time constants for 11 nm after anneal (sample A2) at a fundamental photon energy of 1.66 eV. The solid lines are fits to the data. (b) Order of the electron injection process as a function of fundamental photon energy.
Parameters of the three CP resonances as obtained from the fits to the SHG spectra for on Si(100): 11 nm as-grown (A1) and after anneal (A2), and 26 nm after anneal (B). In the analysis is set to 0. Parameter values in italic were fixed in the analysis.
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