1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Influence of band non-parabolicity on the quantized gate capacitance in -doped MODFED of III–V and related materials
Rent:
Rent this article for
USD
10.1063/1.2986154
/content/aip/journal/jap/104/7/10.1063/1.2986154
http://aip.metastore.ingenta.com/content/aip/journal/jap/104/7/10.1063/1.2986154

Figures

Image of FIG. 1.
FIG. 1.

The plot of the gate capacitance at as a function of surface electric field for the -channel inversion layers in -doped MODFED in which the curves (a)–(c) represent the parabolic, the two, and the three band energy models of Kane .

Image of FIG. 2.
FIG. 2.

The plot of the gate capacitance at as a function of gate voltage for the -channel inversion layers in -doped MODFED in which the curves (a)–(c) represent the parabolic, the two, and the three band energy models of Kane .

Image of FIG. 3.
FIG. 3.

The plot of the Fermi energy at as a function of surface electric field for the -channel inversion layers in -doped MODFED in which the curves (a)–(c) represent the parabolic, the two, and the three band energy models of Kane .

Image of FIG. 4.
FIG. 4.

The plot of the Fermi energy at as a function of gate voltage for the -channel inversion layers in -doped MODFED in which the curves (a)–(c) represent the parabolic, the two, and the three band energy models of Kane .

Image of FIG. 5.
FIG. 5.

The plot of the gate capacitance at as a function of surface electric field for the -channel inversion layers in -doped MODFED in which the curves (a)–(c) represent the parabolic, the two, and the three band energy models of Kane .

Image of FIG. 6.
FIG. 6.

The plot of the gate capacitance at as a function of gate voltage for the -channel inversion layers in -doped MODFED in which the curves (a)–(c) represent the parabolic, the two, and the three band energy models of Kane .

Image of FIG. 7.
FIG. 7.

The plot of the Fermi energy at as a function of surface electric field for the -channel inversion layers in -doped MODFED in which the curves (a)–(c) represent the parabolic, the two, and the three band energy models of Kane .

Image of FIG. 8.
FIG. 8.

The plot of the Fermi energy at as a function of gate voltage for the -channel inversion layers in -doped MODFED in which the curves (a)–(c) represent the parabolic, the two, and the three band energy models of Kane .

Image of FIG. 9.
FIG. 9.

The plot of the gate capacitance at as a function of surface electric field for the -channel inversion layers in -doped MODFED in which the curves (a)–(c) represent the parabolic, the two, and the three band energy models of Kane .

Image of FIG. 10.
FIG. 10.

The plot of the gate capacitance at as a function of gate voltage for the -channel inversion layers in -doped MODFED in which the curves (a)–(c) represent the parabolic, the two, and the three band energy models of Kane .

Image of FIG. 11.
FIG. 11.

The plot of the Fermi energy at as a function of surface electric field for the -channel inversion layers in -doped MODFED in which the curves (a)–(c) represent the parabolic, the two, and the three band energy models of Kane .

Image of FIG. 12.
FIG. 12.

The plot of the Fermi energy at as a function of gate voltage for the -channel inversion layers in -doped MODFED in which the curves (a)–(c) represent the parabolic, the two, and the three band energy models of Kane .

Tables

Generic image for table
Table I.

Values of the energy band constants and device parameters.

Loading

Article metrics loading...

/content/aip/journal/jap/104/7/10.1063/1.2986154
2008-10-01
2014-04-21
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Influence of band non-parabolicity on the quantized gate capacitance in δ-doped MODFED of III–V and related materials
http://aip.metastore.ingenta.com/content/aip/journal/jap/104/7/10.1063/1.2986154
10.1063/1.2986154
SEARCH_EXPAND_ITEM