^{1,a)}, Surya Shankar Dan

^{1}and Santanu Mahapatra

^{1}

### Abstract

We have investigated analytically the influence of band non-parabolicity on the quantized gate capacitance in -channel inversion layers of , , and -doped modulation field effect devices, whose channel electrons obey the three, two, and the parabolic energy band models of Kane. The quantized gate capacitance has been investigated by including the effects of electric subbands under quantum mechanical treatment on GaAs,InSb, and lattices matched to InP as channel materials. The oscillatory dependence of the quantized gate capacitance as a function of surface electric field and gate bias signatures directly the two-dimensional quantum confinement of the carriers. The influence of the band non-parabolicity of the confined carriers significantly influences the value of the gate capacitance. The result of the gate capacitances for the parabolic energy band model forms a special case of our generalized theoretical formalism.

I. INTRODUCTION

II. THEORETICAL BACKGROUND

A. Quantized gate capacitance in -MODFEDs of III–V and related materials under low and high temperatures, whose conduction electrons obey the three band model of Kane

B. Quantized gate capacitance in -MODFEDs of III–V and related materials under low and high temperatures, whose conduction electrons obey the two band model of Kane

C. Quantized gate capacitance in -MODFEDs of III–V and related materials under low and high temperatures, whose conduction electrons obey the parabolic energy band model

III. RESULT AND DISCUSSIONS

### Key Topics

- Capacitance
- 29.0
- III-V semiconductors
- 23.0
- Electric fields
- 19.0
- Band models
- 16.0
- Electron gas
- 15.0

## Figures

The plot of the gate capacitance at as a function of surface electric field for the -channel inversion layers in -doped MODFED in which the curves (a)–(c) represent the parabolic, the two, and the three band energy models of Kane .

The plot of the gate capacitance at as a function of surface electric field for the -channel inversion layers in -doped MODFED in which the curves (a)–(c) represent the parabolic, the two, and the three band energy models of Kane .

The plot of the gate capacitance at as a function of gate voltage for the -channel inversion layers in -doped MODFED in which the curves (a)–(c) represent the parabolic, the two, and the three band energy models of Kane .

The plot of the gate capacitance at as a function of gate voltage for the -channel inversion layers in -doped MODFED in which the curves (a)–(c) represent the parabolic, the two, and the three band energy models of Kane .

The plot of the Fermi energy at as a function of surface electric field for the -channel inversion layers in -doped MODFED in which the curves (a)–(c) represent the parabolic, the two, and the three band energy models of Kane .

The plot of the Fermi energy at as a function of surface electric field for the -channel inversion layers in -doped MODFED in which the curves (a)–(c) represent the parabolic, the two, and the three band energy models of Kane .

The plot of the Fermi energy at as a function of gate voltage for the -channel inversion layers in -doped MODFED in which the curves (a)–(c) represent the parabolic, the two, and the three band energy models of Kane .

The plot of the Fermi energy at as a function of gate voltage for the -channel inversion layers in -doped MODFED in which the curves (a)–(c) represent the parabolic, the two, and the three band energy models of Kane .

The plot of the gate capacitance at as a function of surface electric field for the -channel inversion layers in -doped MODFED in which the curves (a)–(c) represent the parabolic, the two, and the three band energy models of Kane .

The plot of the gate capacitance at as a function of gate voltage for the -channel inversion layers in -doped MODFED in which the curves (a)–(c) represent the parabolic, the two, and the three band energy models of Kane .

The plot of the Fermi energy at as a function of surface electric field for the -channel inversion layers in -doped MODFED in which the curves (a)–(c) represent the parabolic, the two, and the three band energy models of Kane .

The plot of the Fermi energy at as a function of gate voltage for the -channel inversion layers in -doped MODFED in which the curves (a)–(c) represent the parabolic, the two, and the three band energy models of Kane .

## Tables

Values of the energy band constants and device parameters.

Values of the energy band constants and device parameters.

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