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Investigation of correlation between the microstructure and electrical properties of sol-gel derived ZnO based thin films
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10.1063/1.2993978
/content/aip/journal/jap/104/7/10.1063/1.2993978
http://aip.metastore.ingenta.com/content/aip/journal/jap/104/7/10.1063/1.2993978

Figures

Image of FIG. 1.
FIG. 1.

Flowchart for the preparation of ZnO based thin films by sol-gel method.

Image of FIG. 2.
FIG. 2.

XRD (theta-2 theta scan) spectra for pure ZnO films heated for different times at .

Image of FIG. 3.
FIG. 3.

XRD (theta-2 theta scan) spectra for aluminum doped ZnO films heated for different times at .

Image of FIG. 4.
FIG. 4.

Variation in the compressive stress in ZnO and ZAO films with respect to the heating time.

Image of FIG. 5.
FIG. 5.

SEM micrographs of the surface (left) and cross section (right) of pure ZnO films heated at for different times: (a) 10, (c) 45, (e) 60, and (g) 120 min.

Image of FIG. 6.
FIG. 6.

SEM micrographs of the surface (left) and cross section (right) of aluminum doped ZnO films heated at for different times: (a) 30, (c) 90, and (e) 180 min.

Image of FIG. 7.
FIG. 7.

Variation in the average grain size of ZAO and undoped ZnO films with respect to the heating time.

Image of FIG. 8.
FIG. 8.

Change in resistivity, carrier concentration, and Hall mobility of ZnO films with respect to the heating time.

Image of FIG. 9.
FIG. 9.

Variation in electrical properties of ZAO films ( Al) vs increasing heating time.

Image of FIG. 10.
FIG. 10.

Relationship between Hall mobility and carrier concentration for sol-gel derived ZnO films governed by different scattering mechanisms: experimental data (solid circles), grain boundary scattering (hollow circles), and ionized impurity scattering (solid squares).

Image of FIG. 11.
FIG. 11.

Relationship between Hall mobility, grain size, and carrier concentration for sol-gel derived ZnO films under the assumption of constant trap density.

Image of FIG. 12.
FIG. 12.

Relationship between Hall mobility and carrier concentration for ZAO films ( Al): experimental data (solid circles) and calculated values due to ionized impurity scattering (hollow circles).

Tables

Generic image for table
Table I.

Diffraction angles of ZnO and ZnO:Al thin films heated at for different times.

Generic image for table
Table II.

Important parameters for sol-gel derived ZnO films heated at for different times.

Generic image for table
Table III.

Hall mobility, carrier concentration, neutral impurity concentration, and doping efficiency of ZAO films ( Al).

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/content/aip/journal/jap/104/7/10.1063/1.2993978
2008-10-09
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Investigation of correlation between the microstructure and electrical properties of sol-gel derived ZnO based thin films
http://aip.metastore.ingenta.com/content/aip/journal/jap/104/7/10.1063/1.2993978
10.1063/1.2993978
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