Schematic illustration of the experimental equipment used in measuring the dielectric properties under a combined uniaxial stress and dc bias field.
Temperature dependence of the dielectric permittivity at 1 kHz under a combined uniaxial stress and dc bias field.
Dielectric permittivity as a function of temperature at 1 kHz under (a) zero dc bias, (b) 2.8, and (c) 5.6 MV/m. All curves are measured for both zero stress and 10 MPa stress.
Model of the transformation from PMRs to polar macrodomains in the shell part of a core-shell structured grain under the action of a dc bias field.
Changes in the domain configuration under combined dc bias and uniaxial compressive stress.
Temperature and frequency dependence of the dielectric permittivity at zero dc bias and 5.6 MV/m (inset) without uniaxial stress.
Raman spectra at (a) 253 and (b) 323 K, both recorded without dc bias field and at 6 MV/m.
Dependence of the Curie temperature , the Curie–Weiss temperature and the Curie–Weiss constant on dc bias and uniaxial stress.
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