(a) Metal ratios of Hf and Ru in films, measured by XPS, as a function of the power applied to the Ru target. represents Ru or Hf. (b) The Hf and Ru XPS spectra for films. (c) The Hf, Ru, and N atomic percent of films, measured by XPS, as a function of the flow rate ratio. (d) The N XPS spectra for all films.
(a) XRD diffraction patterns for films and Hf and Ru. (b) XRD diffraction patterns for films with respect to literature reported diffraction peaks for various Ru-containing compounds (Refs. 29–31).
SIMS depth profile of the as-deposited gate stacks with 100 nm of (a) and (b) on 7 nm on -Si. Note that since ions were used as the primary ion beam in this work, each element is detected as . SIMS depth profile on the annealed gate stacks (RTA at in for 15 s) with (c) and (d) .
Normalized characteristics of MOS capacitors with (a) and (b) as the gate on films of varying thicknesses on -Si.
(a) The flatband voltage as a function of EOT and (b) the EWF change as a function of Ru ratio in films in comparison to those of Hf and Ru. (c) The flatband voltage as a function of EOT and (d) the EWF as a function of N atomic percent in films.
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