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Material and electrical properties of and metals as gate electrodes for -metal oxide semiconductor field effect transistor devices
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10.1063/1.2996111
/content/aip/journal/jap/104/8/10.1063/1.2996111
http://aip.metastore.ingenta.com/content/aip/journal/jap/104/8/10.1063/1.2996111
/content/aip/journal/jap/104/8/10.1063/1.2996111
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/content/aip/journal/jap/104/8/10.1063/1.2996111
2008-10-16
2014-09-30
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Material and electrical properties of HfxRuy and HfxRuyNz metals as gate electrodes for p-metal oxide semiconductor field effect transistor devices
http://aip.metastore.ingenta.com/content/aip/journal/jap/104/8/10.1063/1.2996111
10.1063/1.2996111
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