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Plasma etching of using remote-type pin-to-plate dielectric barrier discharge
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10.1063/1.2999645
/content/aip/journal/jap/104/8/10.1063/1.2999645
http://aip.metastore.ingenta.com/content/aip/journal/jap/104/8/10.1063/1.2999645
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic of the remote-type atmospheric pressure discharge system (pin-to-plate DBD) used in the experiment.

Image of FIG. 2.
FIG. 2.

Effect of the additive gas flow rate (, ) to the base (60 slm)/ (600 SCCM) gas mixture on the etch rate. The input voltage was 10 kV and the frequency was 30 kHz.

Image of FIG. 3.
FIG. 3.

(a) OES spectrum obtained from the plasma generated with the base (60 slm)/ (600 SCCM) gas mixture and (7 slm) or (600 SCCM) addition. OES peak intensities of F, CF, and measured as a function of (b) and (c) flow rates in the base gas mixture. The input voltage was 10 kV and the operating frequency was 30 kHz.

Image of FIG. 4.
FIG. 4.

XPS spectra of the surface after etching with (a) (60 slm)/ (600 SCCM)/ (3–9 slm) and (b) (60 slm)/ (600 SCCM)/ (200–800 SCCM). (c) The atomic percentage of the XPS peak of the surface after etching and the F/C ratios of the C–F polymer layer on the surface after etching with (60 slm)/ (600 SCCM)/ (3–7 slm) and (60 slm)/ (600 SCCM)/ (200–800 SCCM).

Image of FIG. 5.
FIG. 5.

etch rate as a function of the additive gases ( or Ar) to the optimized gas composition of (60 slm)/ (600 SCCM)/ (7 slm). The input voltage was 10 kV and the operating frequency was 30 kHz.

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/content/aip/journal/jap/104/8/10.1063/1.2999645
2008-10-24
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Plasma etching of SiO2 using remote-type pin-to-plate dielectric barrier discharge
http://aip.metastore.ingenta.com/content/aip/journal/jap/104/8/10.1063/1.2999645
10.1063/1.2999645
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