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Ionization and shielding of interface states in native probed by electric field induced second harmonic generation
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10.1063/1.3000051
/content/aip/journal/jap/104/8/10.1063/1.3000051
http://aip.metastore.ingenta.com/content/aip/journal/jap/104/8/10.1063/1.3000051
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Temporal SH response of natively oxidized -type boron doped Si(100) of different resistivities (doping concentrations): (a) , (b) , and (c) .

Image of FIG. 2.
FIG. 2.

Temporal SH response of natively oxidized -type boron doped Si(100) for early times : (a) , (b) , and (c) .

Image of FIG. 3.
FIG. 3.

Azimuthal angular dependences of the initial (a) and the saturated SH signals (b) recorded at peak intensity when irradiating natively oxidized -type boron doped Si(100) of .

Image of FIG. 4.
FIG. 4.

Schematic energy band diagram of the native interface; positive ionization of interface defect states, Fermi level pinning near VB (VB: valence band); near-interface band bending in space charge region (SCR), CB: conduction band, built-in interfacial electric field .

Image of FIG. 5.
FIG. 5.

Schematic energy band diagram of the native interface under near infrared femtosecond laser irradiation. Superposition of doping induced built-in electric field and photoinduced interfacial electric field components and due to electron and hole injection and trapping (Refs. 12–14, 17, and 19).

Image of FIG. 6.
FIG. 6.

Temporal SH response curve of from Fig. 2(c) recorded at . Instantaneous SH signal due to doping induced built-in electric field , superposition with electric field induced by electron transfer into , cf. text.

Image of FIG. 7.
FIG. 7.

Temporal SH response curves of taken from Figs. 1(a) and 1(c) recorded at . Decreased equilibrium SH signal and less pronounced hole contribution in highly doped (low resistivity) are due to the built-in electric field .

Image of FIG. 8.
FIG. 8.

Initial SH signal amplitude in as indicated by arrows in Fig. 2(c) vs incident laser peak intensity.

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/content/aip/journal/jap/104/8/10.1063/1.3000051
2008-10-28
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Ionization and shielding of interface states in native p+-Si/SiO2 probed by electric field induced second harmonic generation
http://aip.metastore.ingenta.com/content/aip/journal/jap/104/8/10.1063/1.3000051
10.1063/1.3000051
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