Temporal SH response of natively oxidized -type boron doped Si(100) of different resistivities (doping concentrations): (a) , (b) , and (c) .
Temporal SH response of natively oxidized -type boron doped Si(100) for early times : (a) , (b) , and (c) .
Azimuthal angular dependences of the initial (a) and the saturated SH signals (b) recorded at peak intensity when irradiating natively oxidized -type boron doped Si(100) of .
Schematic energy band diagram of the native interface; positive ionization of interface defect states, Fermi level pinning near VB (VB: valence band); near-interface band bending in space charge region (SCR), CB: conduction band, built-in interfacial electric field .
Schematic energy band diagram of the native interface under near infrared femtosecond laser irradiation. Superposition of doping induced built-in electric field and photoinduced interfacial electric field components and due to electron and hole injection and trapping (Refs. 12–14, 17, and 19).
Temporal SH response curve of from Fig. 2(c) recorded at . Instantaneous SH signal due to doping induced built-in electric field , superposition with electric field induced by electron transfer into , cf. text.
Temporal SH response curves of taken from Figs. 1(a) and 1(c) recorded at . Decreased equilibrium SH signal and less pronounced hole contribution in highly doped (low resistivity) are due to the built-in electric field .
Initial SH signal amplitude in as indicated by arrows in Fig. 2(c) vs incident laser peak intensity.
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