Schematic diagram of the process flow for the creation of V- and U-groove arrays on (100) silicon substrate by laser interference lithography.
XTEM image of a V-groove sample rapid thermal annealed at in nitrogen for 60 s. The inset shows the XTEM image of two neighboring V-grooves.
XTEM images of U-groove samples rapid thermal annealed at (a)1000, (b) 900, and (c) for 60 s in nitrogen, respectively. The inset of (a) shows a XTEM image of a sample prepared in exactly the same conditions as sample shown in (a) with the exception that the cosputtered film was deposited on a flat Si surface.
(a) Raman spectra of cosputtered Ge plus silicon oxide films deposited on flat and U-groove substrates. (b) Comparison of stress experienced by Ge nanocrystals embedded in silicon oxide matrix for samples deposited on flat and U-groove substrates.
The Raman spectra of cosputtered Ge plus silicon oxide films deposited on the U-groove and flat substrates annealed at . The inset shows the Raman spectra of the same set of samples from 180 to for reference.
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