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Influence of substrate geometry on the distribution and stress on Ge nanocrystals in silicon oxide matrix
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10.1063/1.3003081
/content/aip/journal/jap/104/8/10.1063/1.3003081
http://aip.metastore.ingenta.com/content/aip/journal/jap/104/8/10.1063/1.3003081
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic diagram of the process flow for the creation of V- and U-groove arrays on (100) silicon substrate by laser interference lithography.

Image of FIG. 2.
FIG. 2.

XTEM image of a V-groove sample rapid thermal annealed at in nitrogen for 60 s. The inset shows the XTEM image of two neighboring V-grooves.

Image of FIG. 3.
FIG. 3.

XTEM images of U-groove samples rapid thermal annealed at (a)1000, (b) 900, and (c) for 60 s in nitrogen, respectively. The inset of (a) shows a XTEM image of a sample prepared in exactly the same conditions as sample shown in (a) with the exception that the cosputtered film was deposited on a flat Si surface.

Image of FIG. 4.
FIG. 4.

(a) Raman spectra of cosputtered Ge plus silicon oxide films deposited on flat and U-groove substrates. (b) Comparison of stress experienced by Ge nanocrystals embedded in silicon oxide matrix for samples deposited on flat and U-groove substrates.

Image of FIG. 5.
FIG. 5.

The Raman spectra of cosputtered Ge plus silicon oxide films deposited on the U-groove and flat substrates annealed at . The inset shows the Raman spectra of the same set of samples from 180 to for reference.

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/content/aip/journal/jap/104/8/10.1063/1.3003081
2008-10-28
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Influence of substrate geometry on the distribution and stress on Ge nanocrystals in silicon oxide matrix
http://aip.metastore.ingenta.com/content/aip/journal/jap/104/8/10.1063/1.3003081
10.1063/1.3003081
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