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An equivalent-circuit model for shunt-connected coplanar microelectromechanical system switches for high frequency applications
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10.1063/1.3003568
/content/aip/journal/jap/104/8/10.1063/1.3003568
http://aip.metastore.ingenta.com/content/aip/journal/jap/104/8/10.1063/1.3003568
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Process flow indicating the main technological steps for obtaining the final geometry of the switch by means of an eight-mask process.

Image of FIG. 2.
FIG. 2.

Picture of a fabricated shunt-connected rf MEMS switch (a) with a detailed view of the suspended bridge (b).

Image of FIG. 3.
FIG. 3.

Schematic of the mechanical behavior of the shunt switch when subjected to an applied dc voltage, by using actuation pads laterally placed with respect to the central conductor of the CPW. The horizontal black line represents the unactuated bridge (bridge at rest) while the gray line represents the bridge actuated by the electrostatic field.

Image of FIG. 4.
FIG. 4.

Lumped-element equivalent circuit for the shunt switch.

Image of FIG. 5.
FIG. 5.

Experimental setup for the rf MEMS switch characterization.

Image of FIG. 6.
FIG. 6.

Experimental (expt, solid line) and theoretical (theo, dashed line) results for the nonactuated rf MEMS switch.

Image of FIG. 7.
FIG. 7.

Experimental (expt, solid line) and theoretical (theo, dashed line) results for the technologically actuated rf MEMS switch.

Image of FIG. 8.
FIG. 8.

Experimental (exp, solid line) and theoretical (theo, dashed line) results for the really actuated rf MEMS switch. A frequency of resonance higher than that expected is experienced due to the contribution of the residual air gap.

Image of FIG. 9.
FIG. 9.

Schematic of the deformation of the bridge when it is actuated by means of a voltage applied to the lateral actuation pads.

Image of FIG. 10.
FIG. 10.

Experimental results for the -parameter [above, (a)] and for the -parameter [below, (b)] of the rf MEMS switch biased by means of different values of the dc voltage by using both lateral pads and bias tee . The frequency of resonance changes with position and the intensity of the actuation voltage. It is worth noting that the voltage bias applied in the center is more effective than that applied on the sides [superimposed curves on the left of (b)].

Image of FIG. 11.
FIG. 11.

Experimental and theoretical results for the technologically actuated rf MEMS switch and for the real one by using as the dielectric layer. The curves on the left are the predicted (theo-tech. act., dashed line) and the measured (exp-tech. actuated, solid line) responses of the technologically actuated switch while the curves on the right are for the predicted (theo–actuated, dashed line) and measured (expt-actuated, solid line) responses of the exploited rf MEMS switch.

Image of FIG. 12.
FIG. 12.

Layout of a shunt switch with floating electrode (a) and detail without the suspended bridge (b).

Image of FIG. 13.
FIG. 13.

Electromagnetic simulation of the -parameters for the floating-metal configuration, compared to the experimental results in both the on (bridge in the up position) and off (bridge in the down position) states. Blue curves are for simulation and red ones are for experimental data.

Image of FIG. 14.
FIG. 14.

Experimental response of the floating-metal rf MEMS switch in the off state as compared to the theoretical response obtained by means of the circuital approach.

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/content/aip/journal/jap/104/8/10.1063/1.3003568
2008-10-30
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: An equivalent-circuit model for shunt-connected coplanar microelectromechanical system switches for high frequency applications
http://aip.metastore.ingenta.com/content/aip/journal/jap/104/8/10.1063/1.3003568
10.1063/1.3003568
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