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Growth of highly tensile-strained Ge on relaxed by metal-organic chemical vapor deposition
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10.1063/1.3005886
/content/aip/journal/jap/104/8/10.1063/1.3005886
http://aip.metastore.ingenta.com/content/aip/journal/jap/104/8/10.1063/1.3005886

Figures

Image of FIG. 1.
FIG. 1.

(a) Calculated carrier mobilities and (b) band gap energy of (100) Ge as function of biaxial tensile strain (Figures reproduced from Ref. 10).

Image of FIG. 2.
FIG. 2.

Ge band structure (a) without and (b) with biaxial tensile strain.

Image of FIG. 3.
FIG. 3.

Reflectivity of wafer surface recorded by EpiTT as a function of growth time for a growth of Ge on GaAs at ; , GeH4 turned on; , incubation period; , first peak of constructive interference; , second peak of constructive interference; , GeH4 turned off.

Image of FIG. 4.
FIG. 4.

AFM images of Ge initiation layers grown on (100) GaAs surface with low Ga-to-As ratio (sample a) and high Ga-to-As ratio (samples b and c).

Image of FIG. 5.
FIG. 5.

XTEM images of Ge initiation layers grown on (100) GaAs surface with low Ga-to-As ratio (sample a) and high Ga-to-As ratio (sample c).

Image of FIG. 6.
FIG. 6.

Wafer surface reflectivity recorded by EpiTT as a function of growth time. (1) Surface annealed at , Ge growth at . (2) TMGa flowed at , Ge growth at . (3) TMGa flowed at , Ge growth at . Line 1 indicates the shortest initiation time.

Image of FIG. 7.
FIG. 7.

AFM images of Ge grown at on (100) GaAs substrate with offcut toward [011], using optimum surface preparation for Ge initiation.

Image of FIG. 8.
FIG. 8.

XTEM images showing Ge growth blocked by defects on surface generated from annealing at .

Image of FIG. 9.
FIG. 9.

XTEM images of tensile-strained Ge layers grown on with different In contents: (a) 5%, (b) 11%, and (c) 21%.

Image of FIG. 10.
FIG. 10.

(a) AFM images of Ge grown on , same sample as in Fig. 8(c). Nucleation of tensile Ge QDs occurs at the step bunches on . (b) AFM images of an GB surface revealing the step bunches.

Image of FIG. 11.
FIG. 11.

Room temperature Raman spectrum of bulk Ge (blue, peak at ), Ge thin film grown on (green, peak at ), and Ge QDs grown on (red, peak at ). For the Ge QDs grown on , the spectrum consists of both an peak (purple dotted line) and a strained Ge (pink dotted line) due to incomplete surface coverage by tensile strain Ge QDs.

Image of FIG. 12.
FIG. 12.

Comparison of strain levels measured by Raman spectroscopy in tensile-strained Ge layers and the theoretical lattice mismatch between Ge and .

Tables

Generic image for table
Table I.

Comparison of carrier mobilities in tensile-strained Ge with other semiconductors under consideration for high speed CMOS channels.

Generic image for table
Table II.

Process variants of different surface preparation techniques to initiate Ge on GaAs (100) surface.

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/content/aip/journal/jap/104/8/10.1063/1.3005886
2008-10-31
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Growth of highly tensile-strained Ge on relaxed InxGa1−xAs by metal-organic chemical vapor deposition
http://aip.metastore.ingenta.com/content/aip/journal/jap/104/8/10.1063/1.3005886
10.1063/1.3005886
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