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Electric-field-induced resonant tunneling lifetime in semiconductor multibarrier systems
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10.1063/1.3006007
/content/aip/journal/jap/104/8/10.1063/1.3006007
http://aip.metastore.ingenta.com/content/aip/journal/jap/104/8/10.1063/1.3006007
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Plot of QRTL vs applied dc electric field in 5-unit cell GaAs/5-unit cell MBS for different numbers of barriers . The numerical digits associated with curves correspond to the quasiresonant energy states (e.g., “1” for minimum energy state) in the miniband.

Image of FIG. 2.
FIG. 2.

Plot of QRTL vs applied dc electric field in 7-unit cell GaAs/3-unit cell MBS for .

Image of FIG. 3.
FIG. 3.

Plot of average escape rate vs applied dc electric field in 5-unit cell GaAs/5-unit cell MBS for different numbers of barriers .

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/content/aip/journal/jap/104/8/10.1063/1.3006007
2008-10-30
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electric-field-induced resonant tunneling lifetime in semiconductor multibarrier systems
http://aip.metastore.ingenta.com/content/aip/journal/jap/104/8/10.1063/1.3006007
10.1063/1.3006007
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