1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
The full text of this article is not currently available.
First-principles-based investigation of kinetic mechanism of SiC(0001) dry oxidation including defect generation and passivation
Rent:
Rent this article for
USD
10.1063/1.3006004
/content/aip/journal/jap/104/9/10.1063/1.3006004
http://aip.metastore.ingenta.com/content/aip/journal/jap/104/9/10.1063/1.3006004
/content/aip/journal/jap/104/9/10.1063/1.3006004
Loading

Data & Media loading...

Loading

Article metrics loading...

/content/aip/journal/jap/104/9/10.1063/1.3006004
2008-11-05
2015-02-01
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: First-principles-based investigation of kinetic mechanism of SiC(0001) dry oxidation including defect generation and passivation
http://aip.metastore.ingenta.com/content/aip/journal/jap/104/9/10.1063/1.3006004
10.1063/1.3006004
SEARCH_EXPAND_ITEM