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Property modifications of nanoporous dielectrics to enhance resistance to plasma-induced damage
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10.1063/1.3006438
/content/aip/journal/jap/104/9/10.1063/1.3006438
http://aip.metastore.ingenta.com/content/aip/journal/jap/104/9/10.1063/1.3006438

Figures

Image of FIG. 1.
FIG. 1.

FTIR spectra of samples A2.2 and B2.2 taken after deposition and UV cure. The spectra are normalized to the oxide absorption peak at . (A) SiO and SiC absorptions, (B) and absorptions, and (C) absorptions.

Image of FIG. 2.
FIG. 2.

Pore size distributions determined from EP desorption isotherms (courtesy of K.-S. Yim, Applied Materials).

Image of FIG. 3.
FIG. 3.

Thickness loss (DT) after an HF wet clean vs carbon content, (A) after exposure to plasma 1 and (B) after exposure to plasma 2.

Image of FIG. 4.
FIG. 4.

The change in dielectric constant measured at and thickness loss (DT) after exposure to plasma 2 vs carbon content.

Image of FIG. 5.
FIG. 5.

Porosity and carbon content plotted vs thickness loss (DT) after exposure to plasma 2.

Image of FIG. 6.
FIG. 6.

ToF-SIMS depth profile of the high-carbon (B2.4) and low-carbon (A2.4) films after exposure to plasma 2.

Image of FIG. 7.
FIG. 7.

ToF-SIMS depth profile of the high-carbon (B2.2) and low-carbon (A2.2) films after exposure to plasma 2.

Image of FIG. 8.
FIG. 8.

ToF-SIMS depth profile of the high-carbon (B2.4) and low-carbon (A2.4) films after exposure to plasma 1.

Image of FIG. 9.
FIG. 9.

ToF-SIMS depth profile of the high-carbon (B2.2) and low-carbon (A2.2) films after exposure to plasma 1.

Image of FIG. 10.
FIG. 10.

Thickness loss as a function of (1:300) exposure time for films A2.2 and B2.2 exposed to plasma 1.

Image of FIG. 11.
FIG. 11.

TEM of cross section of the high-carbon B2.2 film after exposure to plasma 1.

Image of FIG. 12.
FIG. 12.

TEM EELS profiles for the high-carbon B2.2 film after exposure to plasma 1.

Tables

Generic image for table
Table I.

Properties of studied films.

Generic image for table
Table II.

The main FTIR peaks observed in UV cured films A2.2 and B2.2. The notations are as follows: is asymmetric, is symmetric, is bending, is stretching, and is rocking. Assignments were taken from Ref. 19.

Generic image for table
Table III.

Thickness loss (DT) after a first pass and second pass HF wet clean. The first and second pass DT values are calculated relative to the thickness before any HF exposure.

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/content/aip/journal/jap/104/9/10.1063/1.3006438
2008-11-13
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Property modifications of nanoporous pSiCOH dielectrics to enhance resistance to plasma-induced damage
http://aip.metastore.ingenta.com/content/aip/journal/jap/104/9/10.1063/1.3006438
10.1063/1.3006438
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