Typical RHEED pattern recorded during the growth of the sample 20 on GaAs (100)—left viewgraph—and typical XRD scan for a 200 nm film—right graph.
Temperature dependence of the resistivity in the films (samples 14, 35 and 20).
Different plots of sample 20: (a) vs and (b) vs . The straight lines are the linear fits of the data between 5 and 45 K.
The dependence vs for the films (samples 14, 35, and 20).
Low- and high-field MR in the longitudinal and transversal configuration at 295 and 4.2 K measured on film sample 20.
Low- and high-field MR in the longitudinal configuration at different temperatures measured on the film sample 20.
Low-field MR at 50 mT and the high-field MR at 8 T in the longitudinal configuration in the temperature range between 4.2 and 295 K measured on the films (samples 14, 35, and 20).
Low-field MR at 295 K in the longitudinal and transverse configuration on the film sample 14.
Angle dependence of the low-field MR at 200 K on the film sample 20. (a) MR in the longitudinal and transverse configuration. (b) MR in dependence of the angle between current and field direction at constant field of 50 mT.
Magnetic hysteresis loops at 295 K for the film sample 20.
Preparation and film parameter of epitaxial samples prepared for the transport studies.
Article metrics loading...
Full text loading...