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Optical study of -plane InGaN/GaN multiple quantum wells with different well widths grown by metal-organic chemical vapor deposition
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10.1063/1.3013435
/content/aip/journal/jap/104/9/10.1063/1.3013435
http://aip.metastore.ingenta.com/content/aip/journal/jap/104/9/10.1063/1.3013435
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Room temperature PL spectra of -plane InGaN/GaN MQWs with well width ranging from . (b) Normalized PL intensity and energy peak plotted as a function of quantum well width.

Image of FIG. 2.
FIG. 2.

The relation between PL intensity and excitation power density for -plane InGaN/GaN MQWs with different well widths. Inset images illustrate PL spectra as functions of the excitation power for the four -plane InGaN/GaN MQWs with different well widths.

Image of FIG. 3.
FIG. 3.

(a) Monochromatic top view CL images on samples of different well widths using optical filters at the corresponding peak emission wavelengths. (b) Top view image of the same samples using optical filters at the corresponding peak emission wavelengths. The detected emission energies were 2.81, 2.67, 2.49, and 2.47 eV for the samples with 3, 6, 9, and 12 nm well widths, respectively.

Image of FIG. 4.
FIG. 4.

PL spectra as a function of temperature from 20 to 300 K for -plane InGaN/GaN MQWs with different well widths.

Image of FIG. 5.
FIG. 5.

PL peak energy position as a function of temperature for -plane InGaN/GaN MQWs with different well widths.

Image of FIG. 6.
FIG. 6.

(a) TRPL signals of emission peaks in the -plane InGaN/GaN MQWs with different well widths. (b) Relation between and for the signal in (a).

Image of FIG. 7.
FIG. 7.

PL decay time as a function of monitored photon energy at 9 K (black) and the fitting data for the -plane InGaN/GaN MQWs with different well widths (blue).

Image of FIG. 8.
FIG. 8.

Schematic of the localized exciton system. Excitons are transferred from free/extended states to the localized states.

Image of FIG. 9.
FIG. 9.

PL lifetime of -plane InGaN/GaN MQWs with different well widths as a function of temperature. The localization lifetime and the nonradiative lifetime at the free/extended states , estimated from the temperature dependent TRPL signal and PL intensity are also plotted. The , , and correspond to the definitions in the three-level localized exciton model shown in Fig. 8.

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/content/aip/journal/jap/104/9/10.1063/1.3013435
2008-11-07
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Optical study of a-plane InGaN/GaN multiple quantum wells with different well widths grown by metal-organic chemical vapor deposition
http://aip.metastore.ingenta.com/content/aip/journal/jap/104/9/10.1063/1.3013435
10.1063/1.3013435
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