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Dynamic simulation of void nucleation during electromigration in narrow integrated circuit interconnects
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10.1063/1.3040159
/content/aip/journal/jap/105/1/10.1063/1.3040159
http://aip.metastore.ingenta.com/content/aip/journal/jap/105/1/10.1063/1.3040159

Figures

Image of FIG. 1.
FIG. 1.

The formation of the tiny void and its coalescence.

Image of FIG. 2.
FIG. 2.

The movement of the tiny void by the displacement of an atom: (a) before the atom moves and (b) after the atom moves.

Image of FIG. 3.
FIG. 3.

Coarse FEM of the test structure and its submodel.

Image of FIG. 4.
FIG. 4.

The Monte Carlo simulation of the void nucleation.

Image of FIG. 5.
FIG. 5.

Void nucleation site in testing structure.

Image of FIG. 6.
FIG. 6.

Linear regression fitting for current density dependence on experimental .

Image of FIG. 7.
FIG. 7.

The movement of one element in a given volume.

Tables

Generic image for table
Table I.

Testing and simulation result at different temperatures [ (Ref. 21)].

Generic image for table
Table II.

Testing and simulation result at different current densities.

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/content/aip/journal/jap/105/1/10.1063/1.3040159
2009-01-07
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Dynamic simulation of void nucleation during electromigration in narrow integrated circuit interconnects
http://aip.metastore.ingenta.com/content/aip/journal/jap/105/1/10.1063/1.3040159
10.1063/1.3040159
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