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Behaviors of neutral and charged silicon self-interstitials during transient enhanced diffusion in silicon investigated by isotope superlattices
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10.1063/1.3054325
/content/aip/journal/jap/105/1/10.1063/1.3054325
http://aip.metastore.ingenta.com/content/aip/journal/jap/105/1/10.1063/1.3054325
/content/aip/journal/jap/105/1/10.1063/1.3054325
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/content/aip/journal/jap/105/1/10.1063/1.3054325
2009-01-05
2014-10-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Behaviors of neutral and charged silicon self-interstitials during transient enhanced diffusion in silicon investigated by isotope superlattices
http://aip.metastore.ingenta.com/content/aip/journal/jap/105/1/10.1063/1.3054325
10.1063/1.3054325
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