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Behaviors of neutral and charged silicon self-interstitials during transient enhanced diffusion in silicon investigated by isotope superlattices
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10.1063/1.3054325
/content/aip/journal/jap/105/1/10.1063/1.3054325
http://aip.metastore.ingenta.com/content/aip/journal/jap/105/1/10.1063/1.3054325
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

SIMS depth profiles of (upper profiles) in the isotope SLs implanted with at 30 keV, . The upper broken line and solid lines represent the experimental profiles of as-grown and after annealing at for 1 and 4 h, respectively. The implanted profile (lower profile) is calculated by TRIM.

Image of FIG. 2.
FIG. 2.

Simulated self-interstitial (, , and ) profiles (lower lines) in Si-implanted (30 keV, ) Si isotope SLs during annealing at for 1 s, 60 s, and 1 h. Upper broken line and open circles represent the SIMS profiles before and after annealing at for 1 h, respectively. The upper solid curve represents the simulation result.

Image of FIG. 3.
FIG. 3.

SIMS and simulated depth profiles of (upper profiles) and (lower profiles) in the isotope SLs implanted with at 12 keV, . The upper profiles represent the Si profiles before (broken line) and after annealing at for 1 h (open circles) and the lower profiles are the corresponding B profiles. Solid curves are the simulation results.

Image of FIG. 4.
FIG. 4.

Simulated self-interstitial (, , and ) profiles (lower lines) in B-implanted (12 keV, ) Si isotope SLs after annealing at for 5 s and 1 h. The solid, broken, and dotted lines represent the profiles of , , and , respectively. In the upper region, the corresponding B profiles are shown.

Image of FIG. 5.
FIG. 5.

(a) SIMS and simulated depth profiles of in the isotope SLs implanted with at 12 keV, . The broken line and open circles represent the SIMS profiles before and after annealing at for 4 h, respectively. (b) The corresponding B profiles in the Si isotope SLs. (c) Simulated self-interstitial (, , and ) profiles in the B-implanted Si isotope SLs after annealing at for 4 h. The solid, broken, dotted lines represent the profiles of , , and , respectively.

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/content/aip/journal/jap/105/1/10.1063/1.3054325
2009-01-05
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Behaviors of neutral and charged silicon self-interstitials during transient enhanced diffusion in silicon investigated by isotope superlattices
http://aip.metastore.ingenta.com/content/aip/journal/jap/105/1/10.1063/1.3054325
10.1063/1.3054325
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