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X-ray reflectivity and total reflection x-ray fluorescence study of surface oxide evolution in a GaAs/AlAs multilayer system
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10.1063/1.3054336
/content/aip/journal/jap/105/1/10.1063/1.3054336
http://aip.metastore.ingenta.com/content/aip/journal/jap/105/1/10.1063/1.3054336
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Scheme of the three fitting procedures. Solid line and white filling color denotes fixed parameters while gray filling color and dashed lines denote fitted parameters.

Image of FIG. 2.
FIG. 2.

XRR profiles during the aging process. The first scan at the bottom was collected at the beginning while the one at the top was collected after 90 h of x-ray exposure.

Image of FIG. 3.
FIG. 3.

Inverse FFT of the XRR curves. In the inset, the evolution of the peak corresponding to the top layer thickness is evidenced.

Image of FIG. 4.
FIG. 4.

Oxide layer thickness (empty triangles, left scale) and last GaAs layer thickness (gray circles, right scale) as a function of x-ray exposure time.

Image of FIG. 5.
FIG. 5.

XRR profiles collected at the beginning (top) and after 40 h of x-rays exposure (bottom). Experimental data are plotted by empty circles, the best fit profile of the double oxides model is represented by the black line and the best fit profile of the model is represented by a gray line.

Image of FIG. 6.
FIG. 6.

Oxide layers thickness (empty triangles and black circles, left scale) and last GaAs layer thickness (gray circles, right scale) as a function of x-ray exposure time.

Image of FIG. 7.
FIG. 7.

Organic contaminant layer thickness (empty triangles, left scale), oxide layers thickness (black circles, left scale), and last GaAs layer thickness (gray circles, right scale) as a function of x-ray exposure time.

Image of FIG. 8.
FIG. 8.

TXRF spectra collected on the sample after the 300 h of x-ray exposure (solid line) and on a twin sample cut from the same wafer but not exposed to x-ray irradiation (dashed line). Intensity of both spectra has been normalized to the peak.

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/content/aip/journal/jap/105/1/10.1063/1.3054336
2009-01-09
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: X-ray reflectivity and total reflection x-ray fluorescence study of surface oxide evolution in a GaAs/AlAs multilayer system
http://aip.metastore.ingenta.com/content/aip/journal/jap/105/1/10.1063/1.3054336
10.1063/1.3054336
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