The in-plane magnetic hysteresis loop of a 400 nm thick film of . The remanence is 40% as the film breaks up into stripe domains (the inset is a SEMPA image) with partial out-of-plane magnetization. The loop is almost azimuthally invariant .
An illustration of (a) the type of film that exhibits a large stress induced saturation field and (b) the interlayering of the film with a different material to induce grain renucleation and stress relief. The Ta is an adhesion layer needed to suppress stress-induced peeling in (a).
The in-plane magnetic hysteresis loop of a multilayer film of four segments 100 nm each thick with interlayers of Ag 5 nm thick, as illustrated in Fig. 2(b). The saturation field is reduced approximately 400-fold as compared to Fig. 1, the saturation magnetization is unchanged, and the loop is azimuthally invariant .
TEM images of (a) the continuous 400 nm film of Fig. 1, and (b) the multilayer of Fig. 3 consisting of four 100 nm films separated by three 5 nm Ag films. The alternating light and dark bands seen in some grains along the growth direction are twin boundaries. The black arrows point to examples of locations at which renucleation of grains occurs. The grainy material on the top of each structure is glue.
Measurements (by electrochemical dissolution) of the biaxial stress in the continuous film of 400 nm and in the multilayer consisting of four 100 nm films separated by three 5 nm Ag films. The force change in the negative direction indicates the removal of material under tensile (positive) stress.
The in-plane magnetic hysteresis loop of a multilayer film of four 100 nm films separated by three 2 nm CoFe films, as illustrated in Fig. 2(b). The saturation field is reduced approximately 200-fold as compared to Fig. 1, the saturation magnetization increases very slightly, and the loop is azimuthally invariant .
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