Temperature dependence of the product of -on- LW MCT photodiodes for the four selected samples in the same chip.
Diode dynamic resistance vs bias for the sample C1 at different temperatures.
Measured curves and their fitted current components for the sample C1 at the temperatures of (a) 40 K, (b) 70 K, (c) 80 K, (d) 100 K, (e) 120 K, and (f) 140 K.
Temperature dependence of the fitting parameters for the four samples. (a) The dopant density in the region , (b) electron lifetime in the region , (c) effective lifetime in the depletion region , (d) relative energy position of trap level and (e) trap density in the depletion region, and (f) series resistance .
Normalized sensitivity criterion vs the bias for the six fitting parameters.
Material and device parameters used as input parameters of the fitting program
Six fitting parameters of , , , , , and and their error ranges extracted from the measured curves of the sample C1. Data in brackets are the error ranges.
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