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Analysis of temperature dependence of dark current mechanisms for long-wavelength HgCdTe photovoltaic infrared detectors
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10.1063/1.3130163
/content/aip/journal/jap/105/10/10.1063/1.3130163
http://aip.metastore.ingenta.com/content/aip/journal/jap/105/10/10.1063/1.3130163

Figures

Image of FIG. 1.
FIG. 1.

Temperature dependence of the product of -on- LW MCT photodiodes for the four selected samples in the same chip.

Image of FIG. 2.
FIG. 2.

Diode dynamic resistance vs bias for the sample C1 at different temperatures.

Image of FIG. 3.
FIG. 3.

Measured curves and their fitted current components for the sample C1 at the temperatures of (a) 40 K, (b) 70 K, (c) 80 K, (d) 100 K, (e) 120 K, and (f) 140 K.

Image of FIG. 4.
FIG. 4.

Temperature dependence of the fitting parameters for the four samples. (a) The dopant density in the region , (b) electron lifetime in the region , (c) effective lifetime in the depletion region , (d) relative energy position of trap level and (e) trap density in the depletion region, and (f) series resistance .

Image of FIG. 5.
FIG. 5.

Normalized sensitivity criterion vs the bias for the six fitting parameters.

Tables

Generic image for table
Table I.

Material and device parameters used as input parameters of the fitting program

Generic image for table
Table II.

Six fitting parameters of , , , , , and and their error ranges extracted from the measured curves of the sample C1. Data in brackets are the error ranges.

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/content/aip/journal/jap/105/10/10.1063/1.3130163
2009-05-20
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Analysis of temperature dependence of dark current mechanisms for long-wavelength HgCdTe photovoltaic infrared detectors
http://aip.metastore.ingenta.com/content/aip/journal/jap/105/10/10.1063/1.3130163
10.1063/1.3130163
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