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Effect of the hydrophobicity and thickness of polymer gate dielectrics on the hysteresis behavior of pentacene-based field-effect transistors
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10.1063/1.3131664
/content/aip/journal/jap/105/10/10.1063/1.3131664
http://aip.metastore.ingenta.com/content/aip/journal/jap/105/10/10.1063/1.3131664

Figures

Image of FIG. 1.
FIG. 1.

Schematic representation of top-contact pentacene-based OFETs fabricated using (a) an ultrathin polymer/ bilayer and (b) a thick single polymer as gate dielectric. The materials employed in our experiments are (c) PVP, (d) CYTOP, and (e) PMF.

Image of FIG. 2.
FIG. 2.

FTIR absorption spectra of CYTOP, pristine, and cross-linked PVP polymer films spin-coated on an Au substrate (the thickness of the films was about 600 nm, measured with a surface profiler).

Image of FIG. 3.
FIG. 3.

Cross-linking reaction of PVP with the cross-linker PMF. The concentration of PMF with respect to the total amount of solute is 20 wt %. The reaction is performed in a -rich oven (, 1 h).

Image of FIG. 4.
FIG. 4.

output characteristics of pentacene-based OFETs fabricated with (a) CYTOP/, (b) cross-linked PVP/, and (c) pristine PVP/ bilayer gate dielectrics. varies from 0 to −80 in steps of −20 V.

Image of FIG. 5.
FIG. 5.

output characteristics of pentacene-based OFETs fabricated with single-polymer gate dielectrics containing (a) CYTOP, (b) cross-linked PVP, and (c) pristine PVP. varies from 0 to −80 in steps of −20 V.

Image of FIG. 6.
FIG. 6.

Frequency-dependent dielectric constant for (a) an ultrathin polymer/ bilayer and (b) a single polymer gate dielectric sandwiched between Au dots and highly doped -type (100) Si substrates. The of the gate dielectric was first measured in a -rich atmosphere (, red symbols) and then determined again after exposure (for 2 h) to a humid environment (, blue symbols).

Image of FIG. 7.
FIG. 7.

transfer characteristics of pentacene-based OFETs in the linear regime . The devices were fabricated using an ultrathin polymer/ bilayer gate dielectric and operated in two different environments, namely, vacuum and ambient air . (a) CYTOP, (b) cross-linked-PVP, and (c) pristine PVP devices.

Image of FIG. 8.
FIG. 8.

Linear regime transfer characteristics of pentacene-based OFETs with (a) CYTOP, (b) cross-linked PVP, and (c) pristine PVP single-polymer gate dielectrics. The curves were obtained during device operation in vacuum and ambient air .

Image of FIG. 9.
FIG. 9.

Linear regime transfer characteristics of a pentacene-based device containing a pristine PVP/ bilayer gate dielectric, measured at different sweep ranges of negative in (a) vacuum and (b) ambient air .

Image of FIG. 10.
FIG. 10.

Gate-sweep-rate-dependent transfer characteristics of pentacene-based OFETs in the linear regime . The devices were fabricated using a pristine PVP single-polymer gate dielectric and operated in two different environments: (a) vacuum and (b) ambient air .

Tables

Generic image for table
Table I.

Surface energy and polarity of polymer gate dielectrics.

Generic image for table
Table II.

Electrical parameters obtained for the devices operated in vacuum.

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/content/aip/journal/jap/105/10/10.1063/1.3131664
2009-05-26
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of the hydrophobicity and thickness of polymer gate dielectrics on the hysteresis behavior of pentacene-based field-effect transistors
http://aip.metastore.ingenta.com/content/aip/journal/jap/105/10/10.1063/1.3131664
10.1063/1.3131664
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