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Mobility estimation in microsized bismuth wire arrays
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10.1063/1.3133136
/content/aip/journal/jap/105/10/10.1063/1.3133136
http://aip.metastore.ingenta.com/content/aip/journal/jap/105/10/10.1063/1.3133136

Figures

Image of FIG. 1.
FIG. 1.

Temperature dependence of the Seebeck coefficient for bulk and 2-, 6-, 10-, and -diameter microwire arrays.

Image of FIG. 2.
FIG. 2.

Temperature dependence of resistivity for bulk and 2-, 6-, 10-, and -diameter microwire arrays. An inset shows resistivity as a function of the bulk resistivity.

Image of FIG. 3.
FIG. 3.

Temperature dependence of estimated mobility for electrons and holes for bulk and 2-, 6-, 10-, and -diameter microwire arrays. SC is the mobility in a single crystal, each axis simply averaged.

Image of FIG. 4.
FIG. 4.

Ratio of electron mobility divided by hole mobility as a function of temperature.

Image of FIG. 5.
FIG. 5.

Mobility ratio divided by that at 300 K as a function of wire diameter at (a) 200, (b) 100, and (c) 50 K.

Image of FIG. 6.
FIG. 6.

Temperature dependence of the sum of electron and hole mobility.

Image of FIG. 7.
FIG. 7.

Estimated normalized resistivity with various cases of mobility.

Tables

Generic image for table
Table I.

Specifications of prepared sample.

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/content/aip/journal/jap/105/10/10.1063/1.3133136
2009-05-28
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Mobility estimation in microsized bismuth wire arrays
http://aip.metastore.ingenta.com/content/aip/journal/jap/105/10/10.1063/1.3133136
10.1063/1.3133136
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