characteristics measured at 600 K with the HPHT diamond sample 1 (data with linear best fit in the range of ±600 V). Inset: data and quadratic best fit in the range of 0–6 V.
(a) HPHT diamond sample: Current-temperature characteristics at 100 V (open dots) and TSC analysis at same applied voltage (solid stars) after 10 Gy irradiation from a source. Solid lines: best fit of the descending curves. (b) pCVD diamond sample: Current-temperature characteristics at 100 V (open squares) and TSC analysis at same applied voltage (solid squares) after 20 min exposure to UV irradiation from a Xe lamp. Solid lines: best fit of the TSC curves. Dashed lines: calculated TSC fitting components.
Measurements on HPHT diamond sample 2: current-temperature characteristics at (stars); ZBTSC spectra obtained after cycles at (squares) and (open squares). The sign of the ZBTSC is always opposite to the sign of the electric field applied during the filling process. Heating rate is 0.1 K/s. Inset: total charge collected in a ZBTSC measurement as a function of the filling voltage .
HPHT diamond sample 1: TSC at zero bias (ZBTSC) as a function of the heating rate and (inset) analysis of the variable heating-rate data plotted in the main figure to yield a value of trap energy of 1.2 eV.
pCVD diamond sample: TSC curve (squares) after a 20 min exposure to a Xenon lamp (bias voltage of ); ZBTSC spectra, multiplied by , obtained after cycles at (open dots) and (dots). Heating rate is 0.1 K/s.
(a) ZBTSC after UV irradiation on a HPHT sample 2 at room temperature and . (b) ZBTSC of the pCVD sample after UV irradiation at room temperature with and −100 V. (c) Detail showing the shallower ZBTSC peak revealed in pCVD sample after UV irradiation at room temperature and . Thermal scan rate is 0.1 K/s.
(a) TSC signals measured with the HPHT sample 2 after cycles at with zero bias (dots), 100 mV (open squares), 1 V (stars), and 2 V (open dots). The decrease in the peak with increasing put into evidence the compensating effect of the external bias on the built-in voltage induced by the charged defects. (b) TSC signals measured with the pCVD sample after cycles at with different biases from null (ZBTSC) to 50 V. The decrease in the peak with increasing put into evidence the compensating effect of the external bias on the built-in voltage induced by the charged defects.
Band diagram in the HPHT diamond sample. (a) At equilibrium, considering back-to-back Schottky barrier configuration. (b) After priming, when processes of charge redistribution occur: (1a) capture/emission by donor, (1b) tunneling from barrier, (2a) emission of donors, (2b) neutralization of the acceptors at the edge of the cdr, (3a) electron capture from ionized donor, and (3b) ionization of acceptor in the adr. (c) In a ZBTSC, (1) emission of free holes by the acceptor and (2) donor relaxation. (d) Relaxation of the zero-field plane during the thermal heating scan from the metastable position after priming to the equilibrium position .
Band diagram of the pCVD diamond sample. (a) At equilibrium, considering a back-to-back Schottky barrier configuration. (b) priming cycle when charge redistribution occurs: (1) emission/capture by the acceptor in the bulk, (2) ionization of the acceptor at the edge of the adr, (3) neutralization of the acceptor in the cdr, (4) hole capture by the donor in the bulk but in the adr, and (5) hole injection from anode. (c) Free hole generation during the ZBTSC: emission from (1) donors and (2) acceptors and (3) injection from cathode. (d) Relaxation of the zero-field plane during the thermal scan.
(a) Band diagram and (b) charge density distribution of the pCVD diamond sample after UV priming and electrode short circuit. (c) Behavior of anodic zero-field plane during relaxation: (1) emission of shallow traps in the negative electric field region, (2) charge redistribution in the donor levels, (3) charge redistribution in the acceptor levels, and (4) neutralization of the charge stored into the volume by injection from the anode contact.
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