Mean free path and wire diameter dependencies of mobility, based on that of bulk bismuth at 100 and 300 K. Experimental results are also plotted, as the diameter of samples corresponds to the mean free path.
(a) Temperature dependence of mobility for each mean free path. Bulk bismuth values were obtained from experiment. Experimental results are also plotted, as the diameter of samples corresponds to the mean free path. (b) A comparison of the mobility estimated from experiment and calculation, here the wire diameter was equal to the mean free path of the carrier [Eq. (8)].
Mean free path or wire diameter dependencies of resistivity and its difference defined by Eq. (9) at 100 and 300 K.
Temperature dependence of the differential resistivity compared to bulk sample. Black patterned lines and colored (solid) lines show the calculated and experimental results, respectively.
Wire diameter of resistivity under 1000 nm. The inset shows the inverse wire diameter dependence.
Temperature dependence of (a) the resistivity and (b) the normalized resistivity at 300 K, with calculations assuming the mean fee path (black lines) and experimental results showing each diameter (colored lines).
Mean free path dependence of the Seebeck coefficient with experimental results at 100 and 300 K. The inset shows the mean free path dependence of at 100 and 300 K.
(a) Temperature dependence of the Seebeck coefficient for each mean free path (black patterned lines) and several experimental results (colored lines). The inset shows the temperature dependence of the Seebeck coefficient assumed the value in Eq. (12). (b) Comparison of the experimental (colored lines) and calculated (black patterned lines) Seebeck coefficients as a basis for the bulk sample measured.
Temperature dependence of the normalized resistivity at 300 K toward each axis (binary, bisectrix, and trigonal) of the system. [1, 0, 0], [0, 1, 0], and [0, 0, 1] correspond to binary, bisectrix, and trigonal axes of the bismuth, respectively.
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