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The effect of postannealing on the electrical properties of well-aligned nanorods/ heterojunction
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10.1063/1.3137204
/content/aip/journal/jap/105/11/10.1063/1.3137204
http://aip.metastore.ingenta.com/content/aip/journal/jap/105/11/10.1063/1.3137204
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

The SEM images of the top view of the ZnO nanorods grown on the substrate. The inset shows the ZnO array can be selectively grown on the prepatterned sputtered seed layer.

Image of FIG. 2.
FIG. 2.

XRD patterns of (a) the as-grown ZnO nanorods and (b) the ZnO nanorods annealed in air for 30 min.

Image of FIG. 3.
FIG. 3.

characteristics of the as-grown and annealed ZnO nanorods/ heterojunction. The inset shows the schematic diagram of the device and measurement method.

Image of FIG. 4.
FIG. 4.

Log-log plots of the current-voltage under forward bias of (a) the as-grown sample and (b) the sample annealed in air. The inset in (a) shows the corresponding semilog plot and the inset in (b) shows the energy band diagram of the heterojunction at zero bias.

Image of FIG. 5.
FIG. 5.

Room-temperature PL spectra of the as-grown ZnO nanorods and the sample annealed in air.

Image of FIG. 6.
FIG. 6.

O peak of the XPS spectra of the obtained ZnO nanorods of (a) the as-grown sample and (b) the sample annealed in air for 30 min (circle: experimental data; red, green and blue line: fitting curves).

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/content/aip/journal/jap/105/11/10.1063/1.3137204
2009-06-02
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: The effect of postannealing on the electrical properties of well-aligned n-ZnO nanorods/p-Si heterojunction
http://aip.metastore.ingenta.com/content/aip/journal/jap/105/11/10.1063/1.3137204
10.1063/1.3137204
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