(a) Schematic representation of sample C. The sample is composed of virtual vertical columns with very tiny Si NCs (dark dots) embedded in a matrix. The matrix is represented by the gray color between the NCs. (b) HRTEM image taken from sample C.
HRTEM images obtained from (a) film B and (b) film D.
PL spectra obtained from films A–D at 70 K.
PL spectra obtained at different temperatures from films (a) A, (b) B, and (c) C.
PL intensity normalized to the maximum value as a function of temperature for films A–C.
PL decay times at different temperatures as extracted from stretched exponential fittings to the experimental PL decay curves for films A–D. Insert: An example of stretched exponential fitting (solid line) to the experimental PL decay curve (open circles) obtained from film A at 70 K.
Dispersion factor at different temperatures as extracted from stretched exponential fitting to the experimental decay curves for films A–D.
Electrochemical growth conditions and characteristics of the porous Si films.
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