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Photo-oxidation effects of light-emitting porous Si
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10.1063/1.3140677
/content/aip/journal/jap/105/11/10.1063/1.3140677
http://aip.metastore.ingenta.com/content/aip/journal/jap/105/11/10.1063/1.3140677
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

PL spectrum evolution in PSi sample photo-oxidized by illuminating UV light. The photo-oxidation and PL measurements were performed by illuminating light at for to 1 h. The PL spectrum for a photo-oxidized and subsequently HF-etched sample is also shown by the heavy (red) solid line.

Image of FIG. 2.
FIG. 2.

Normalized integrated PL intensity vs UV light exposure time for PSi sample. The solid line shows the result calculated using Eq. (1), while that in the inset is obtained from Eq. (2).

Image of FIG. 3.
FIG. 3.

PL spectra for as-prepared, photo-oxidized (, ), and photo-oxidized and subsequently HF-etched PSi samples.

Image of FIG. 4.
FIG. 4.

PL spectra for (a) as-prepared, (b) photo-oxidized (, ), and (c) photo-oxidized and subsequently HF-etched PSi samples. The dashed lines represent the deconvolution of each spectrum into several Gaussian peaks. The heavy solid lines show the sum of these peaks.

Image of FIG. 5.
FIG. 5.

Deconvoluted PL peak energies P1–P4 vs photo-oxidation time at . The solid lines provide the blueshift rates of (P1), (P2), (P3), and (P4).

Image of FIG. 6.
FIG. 6.

PLE spectra for as-prepared, photo-oxidized (, ), and photo-oxidized and subsequently HF-etched PSi samples. The PLE spectra were obtained by monitoring at .

Image of FIG. 7.
FIG. 7.

XPS spectra for the Si region in (a) , (b) as-prepared PSi, (c) photo-oxidized PSi (, ), and (d) photo-oxidized and subsequently HF-etched PSi samples. The peak can be decomposed into two spin-orbit split peaks, Si 3/2 and 1/2, with a peak energy difference of (vertical lines).

Image of FIG. 8.
FIG. 8.

Results of the contact-angle measurements for (a) as-prepared, (b) photo-oxidized, and (c) photo-oxidized and subsequently HF-etched PSi samples.

Image of FIG. 9.
FIG. 9.

Schematic representations of (a) clean Si, (b) H-terminated PSi, and (c) photo-oxidized PSi surfaces.

Image of FIG. 10.
FIG. 10.

Normalized integrated PL intensity vs photo-oxidation time for PSi sample. The oxidization light wavelengths are , 500, and 700 nm. The data in the dark are also shown by the solid circles (see also Fig. 11). The solid lines show the results calculated using Eq. (5). The inset plots the quenching rate of the PL intensity in Eq. (5) against oxidization photon energy . The solid line in the inset represents the relation of Eq. (6).

Image of FIG. 11.
FIG. 11.

PL spectra for as-prepared PSi sample and that aged in room air in the dark for . Note that these two spectra almost overlap each other.

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/content/aip/journal/jap/105/11/10.1063/1.3140677
2009-06-08
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Photo-oxidation effects of light-emitting porous Si
http://aip.metastore.ingenta.com/content/aip/journal/jap/105/11/10.1063/1.3140677
10.1063/1.3140677
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